Abstract:Semiconductor superlattices have been extensively investigated for thermoelectric applications, to explore the effects of compositions, interface structures, and lattice strain environments on the reduction of thermal conductivity, and improvement of efficiency. Most studies assumed that their electronic properties remain unaffected compared to their bulk counterparts. However, recent studies demonstrated that electronic properties of silicon (Si)/germanium (Ge) superlattices show significant variations depending on compositions and growth substrates. These studies used a constant relaxation time approximation, and ignored the effects of electron scattering processes. Here, we consider electron scattering with phonons and ionized impurities, and report first-principles calculations of electronic transport properties including the scattering rates. We investigate two classes of Si/Ge superlattices: superlattices with varied compositions grown on identical substrates and with identical compositions but grown on different substrates. We illustrate the relationship between the energy bands of the superlattices and the electron-phonon relaxation times. We model the electron-ionized impurity interaction potentials by accounting for the in-plane and the cross-plane structural anisotropy. Our analysis reveals that the inclusion of electron-phonon and electron-impurity scattering processes can lead to ~1.56-fold improved peak power-factors, compared to that of bulk Si. We observe that superlattices can also display dramatically reduced power-factors for specific lattice strain environments. Such reduction could cancel out thermoelectric efficiency improvements due to reduced thermal conductivities. Our study provides insight to predict variation of electronic properties due to changes in lattice strain environments, essential for designing superlattices with optimized electronic properties.

Spin-dependent Intravalley and Intervalley Electron-Phonon Scatterings in Germanium

Valley-dependent spin polarization and long-lived electron spins in germanium

Coexistence of Pseudospin- and Valley-Hall-like Edge States in a Photonic Crystal with C3v Symmetry

Hot-electron effect in spin relaxation of electrically injected electrons in intrinsic Germanium

Giant Spin Lifetime Anisotropy and Spin-Valley Locking in Silicene and Germanene from First-Principles Density-Matrix Dynamics

Light Scattering by Superlattice Acoustic Modes at Critical Points of the Brillouin Zone

Full-landscape selection rules of electrons and phonons and temperature-induced effects in 2D silicon and germanium allotropes

Semiconductor Photoelastic Constants Measured by Light Scattering in Superlattices.

Electron-phonon Coupling in Gallium-Doped Germanium

Spin Relaxation in Germanium Nanowires

Electrical spin injection and transport in germanium

Ab-initio predictions of spin relaxation, dephasing and diffusion in solids

Spin–orbit coupling in bulk GaAs

Effect of Electron-Phonon and Electron-Impurity Scattering on Electronic Transport Properties of Silicon/Germanium Superlattices

Spin pumping and laser modulated inverse spin Hall effect in yttrium iron garnet/germanium heterojunctions

Interface optical phonon-assisted scattering rates in wurtzite nitride step quantum wells with strong built-in electric field

Probing spin-phonon interactions in silicon carbide with Gaussian acoustics

Interface and electromagnetic effects in the valley splitting of Si quantum dots

Electron Spin Coherence of Shallow Donors in Natural and Isotopically Enriched Germanium

Electron–optical–phonon Scattering in Non-Square Quantum-Well Structures

Critical-point analysis of the phonon spectra of diamond, silicon and germanium