Nonlinear Hall effect from long-lived valley-polarizing relaxons

Jae-Mo Lihm,Cheol-Hwan Park

DOI: https://doi.org/10.1103/PhysRevLett.132.106402

2024-03-12

Abstract:The nonlinear Hall effect has attracted much attention due to the famous, widely adopted interpretation in terms of the Berry curvature dipole in momentum space. Using ab initio Boltzmann transport equations, we find a 60% enhancement in the nonlinear Hall effect of p-doped GeTe and its noticeable frequency dependence, qualitatively different from the predictions based on the Berry curvature dipole. The origin of these differences is long-lived valley polarization in the electron distribution arising from electron-phonon scattering. Our findings await immediate experimental confirmation.

Mesoscale and Nanoscale Physics,Materials Science

What problem does this paper attempt to address?

This paper attempts to solve the experimental phenomena in the Nonlinear Hall Effect (NLH) that cannot be explained by the traditional Berry curvature dipole model. Specifically, by solving the Boltzmann transport equation (BTE), the authors found that in p - type doped GeTe materials, the NLH effect is significantly enhanced, and this enhancement has a distinct frequency dependence, which is significantly different from the traditional predictions based on the Berry curvature dipole.

### Main problems
1. **Limitations of the traditional model**:
- The traditional Berry curvature dipole model assumes the constant relaxation time approximation (CRTA), that is, all scattering processes occur with the same relaxation time, which ignores the complex details of scattering processes in actual systems.
- The CRTA assumption leads to the neglect of total charge conservation and quasi - momentum conservation, and thus cannot accurately describe the non - equilibrium carrier distribution.

2. **New physical mechanisms**:
- It has been found that the long - lived valley polarization caused by electron - phonon scattering is the main reason for the enhancement of the NLH effect.
- This long - lived valley polarization is caused by specific scattering channels in electron - phonon scattering, and these scattering channels make the carrier distributions between different valleys different.

### Specific objectives
- **Reveal the enhancement mechanism of the NLH effect**: By accurately solving the BTE, the researchers found that in GeTe materials, the NLH effect is 60% stronger than that predicted by the traditional model and has a distinct frequency dependence.
- **Understand the frequency dependence**: The response of the NLH effect shows a sharp peak in the terahertz frequency band and drops rapidly at higher frequencies. This characteristic is attributed to the existence of long - lived valley polarization.
- **Propose new design principles**: Look for materials with multiple valleys and momentum - dependent scattering mechanisms to maximize the efficiency of the NLH effect.

### Methods
- **Boltzmann transport equation (BTE)**: Used to describe the non - equilibrium state evolution of electrons under the action of an electric field.
- **Relaxon method**: Decompose the dynamics of the electron system into relaxon modes, which have different lifetimes and can better describe long - lived physical quantities.

### Conclusions
Through the above methods, the researchers have revealed the physical mechanisms of the NLH effect enhancement and frequency dependence, that is, the role of long - lived valley polarization. This finding not only helps to understand the essence of the NLH effect but also provides theoretical guidance for designing new and efficient NLH materials.