Abstract:Abstract Valley, the energy extrema in the electronic band structure at momentum space, is regarded as a new degree of freedom of electrons, in addition to charge and spin. The studies focused on valley degree of freedom now form an emerging field of condensed-matter physics, i.e., valleytronics, whose development is exactly following that of spintronics, which focuses on the spin degree of freedom. Here, in analogy to half-metals in spintronics where one spin channel is conducting, whereas the other is insulating, we propose the concept of half-valley metal, in which conduction electrons are intrinsically 100% valley polarized, as well as 100% spin polarized even when spin–orbit interactions are considered. Combining first-principle calculations with a two-band k · p model, the physical mechanism to form the half-valley metal is illuminated. Taking the ferrovalley H-FeCl 2 monolayer with strong exchange interaction as an example, we find that the strong electron correlation effect can induce the ferrovalley to half-valley-metal transition. Due to the valley-dependent optical selection rules, such a system could be transparent to, e.g., left-circularly polarized light, yet the right-circularly polarized light will be reflected, which can in turn be used as a crucial method to detect the half-valley-metal state. Interestingly, with the increase of the correlation effect, the system becomes insulating again with all valleys following the same optical selection rule. We confirm that in this specific case, the valence bands, which consist of single spin, possess nonzero Chern number and consequently an intrinsic quantum anomalous valley Hall effect emerges. Our findings open an appealing route toward functional 2D materials design of valleytronics.

Nonlinear Valley Hall Effect

Nonlinear Valley Hall Effect

Nonlinear Hall Effect from Long-Lived Valley-Polarizing Relaxons

Nonlinear valley and spin valves in bilayer graphene

Geometric Valley Hall Effect and Valley Filtering Through a Singular Berry Flux

Nonconservation of the Valley Density and its Implications for the Observation of the Valley Hall Effect

Layer-valley Hall effect under inversion and time-reversal symmetries

Electrical control of the anomalous valley Hall effect in antiferrovalley bilayers

Tunneling Valley Hall Effect Driven by Tilted Dirac Fermions

Nonlinear Hall effect with time-reversal symmetry: Theory and material realizations

Non-conservation of the valley density and its implications for the observation of the valley Hall effect

Nonlinear Hall Effect in Two-dimensional Materials

Valley Hall Effect in Two-Dimensional Hexagonal Lattices

Bulk valley transport and Berry curvature spreading at the edge of flat bands

Intrinsic Nonlinear Hall Effect and Gate-Switchable Berry Curvature Sliding in Twisted Bilayer Graphene

Nonlinear topological valley Hall edge states arising from type-II Dirac cones

Concepts of the half-valley-metal and quantum anomalous valley Hall effect

Coupled Spin and Valley Hall Effects Driven by Coherent Tunneling

Tunable and giant valley-selective Hall effect in gapped bilayer graphene