Abstract:Valley is a quantum number defined for energetically degenerate but nonequivalent structures in energy bands of a crystalline material. Recent discoveries of two-dimensional (2D) layered materials have shed light on the potential use of this degree of freedom for information carriers because the valley can now be potentially manipulated in integrated 2D architectures. The valleys separated by a long distance in a momentum space are robust against external disturbance and the flow of the valley, the valley current, is nondissipative because it carries no net electronic current. Among the various 2D valley materials, graphene has by far the highest crystal quality, leading to an extremely long valley relaxation length in the bulk. In this review, we first describe the theoretical background of the valley Hall effect, which converts an electric field into a valley current. We then describe the first observation of the valley Hall effect in monolayer MoS2. Finally, we describe experiments on the generation and detection of the pure valley current in monolayer and bilayer graphene, achieved recently using the valley Hall effect and inverse valley Hall effect. While we show unambiguous evidence of a pure valley current flowing in graphene, we emphasize that the field of “valleytronics” is still in its infancy and that further theoretical and experimental investigations are necessary.

Tunneling valley Hall effect induced by coherent geometric phase

Tunneling valley Hall effect driven by tilted Dirac fermions

Coupled Spin and Valley Hall Effects Driven by Coherent Tunneling

Nonlinear Valley Hall Effect

Geometric Valley Hall Effect and Valley Filtering Through a Singular Berry Flux

Valley-Selective Klein Tunneling through a Superlattice Barrier in Graphene

Tunable Valley Splitting and Anomalous Valley Hall Effect in VTe2/Ga2S3 Heterostructures

Tunable valley Hall effect in gate-defined graphene superlattices

Microscopic Origin of the Valley Hall Effect in Transition Metal Dichalcogenides Revealed by Wavelength-Dependent Mapping

Electric-field-tunable topological phases in valley-polarized quantum anomalous Hall systems with inequivalent exchange fields

Valley switch effect in an α -T 3 lattice-based superconducting interferometer

Tunable and giant valley-selective Hall effect in gapped bilayer graphene

Electrically Tunable Valleytronics in Quantum Anomalous Hall Insulating Transition Metal Trihalides

Gate-field control of valley polarization in valleytronics

Valley Hall Effect in Two-Dimensional Hexagonal Lattices

Valley Manipulation by Sliding-Induced Tuning of the Magnetic Proximity Effect in Heterostructures.

Layer-valley Hall effect under inversion and time-reversal symmetries

A valley valve and electron beam splitter

Berry Phase Induced Valley Level Crossing in Bilayer Graphene Quantum Dots