Coupled Spin and Valley Hall Effects Driven by Coherent Tunneling

W. Zeng

2024-09-27

Abstract:We predict the coexistence of tunneling spin and valley Hall effects when electrons in graphene coherently transmit through a barrier with broken inversion symmetry and intrinsic spin-orbit coupling. Due to the rotation of the pseudospin in the tunneling process, the transmitted electrons acquire a finite spin- and valley-dependent backreflection geometric phase when the two interfaces of the barrier are asymmetric. This results in a spin- and valley-dependent skew coherent tunneling, which is responsible for the transverse spin and valley Hall currents. We further demonstrate that the coherent-tunneling assisted charge-spin and charge-valley conversions are highly efficient with large Hall angles. Our work provides a new route for the generation of efficient spin and valley Hall effects, suggesting potential applications for spintronic and valleytronic devices.

Mesoscale and Nanoscale Physics

What problem does this paper attempt to address?

The problem that this paper attempts to solve is: in graphene heterojunctions, how to simultaneously generate the tunneling spin Hall effect (TSHE) and the tunneling valley Hall effect (TVHE) through the coherent tunneling effect. Specifically, the author explores whether the co - existence of the spin and valley Hall effects can be achieved when electrons coherently transmit in a barrier with broken inversion symmetry and intrinsic spin - orbit coupling.

### Main problems and solutions

1. **Problem description**:
- How to generate efficient spin and valley Hall effects without breaking time - reversal symmetry and without tilting the Dirac cone.
- Traditional spin Hall effect (SHE) and valley Hall effect (VHE) usually rely on extrinsic mechanisms (such as impurity scattering or magnetic proximity effect) or intrinsic mechanisms (such as spin - orbit coupling in band topology), but these methods have limitations.

2. **Proposed new mechanism**:
- The author proposes a new mechanism based on phase - coherent tunneling. Under this mechanism, electrons will acquire a finite spin - and - valley - related back - reflection geometric phase during the tunneling process, resulting in spin - and - valley - dependent skewed coherent tunneling.
- This skewed coherent tunneling can effectively generate transverse spin and valley Hall currents without breaking time - reversal symmetry or introducing a tilted Dirac cone.

3. **Physical principle**:
- During the tunneling process, due to the rotation of the pseudo - spin, electrons acquire a finite spin - and - valley - related back - reflection geometric phase at the asymmetric barrier interface.
- This geometric phase is caused by the rotation of the pseudo - spin polarization vector on the Bloch sphere, rather than by the usual Berry phase.
- The existence of the geometric phase makes spin - and - valley - dependent skewed tunneling possible, which in turn leads to transverse spin and valley Hall currents.

4. **Model and results**:
- The author constructs a graphene tunneling junction model that includes a pseudo - spin step - like potential and intrinsic spin - orbit coupling.
- Through calculations, they show that under specific parameter conditions, efficient spin and valley Hall effects can be achieved, and these effects have large Hall angles.
- The results indicate that this new mechanism can provide potential application prospects for spintronics and valleytronics devices.

### Summary

This paper solves the problem of simultaneously generating efficient spin and valley Hall effects in graphene heterojunctions by proposing a new mechanism based on phase - coherent tunneling. This mechanism not only avoids the limitations of traditional methods but also shows its application potential in spintronics and valleytronics devices.