Abstract:In this study, the effects of different influence factors on electroplating-based via-filling process were studied in a systematic manner. A through-silicon-via (TSV) chip was firstly designed, the chip size was $16\times 10{\rm mm}^{2}$ with the TSV interconnects. The via was in diameter of $50\mu {\rm m}$ and depth of $75\mu {\rm m}$. The deep reactive ion etching (DRIE) technique was employed to fabricate the vias onto the silicon wafer. In order to fill up the vias by using the electroplating process, the ${\rm SiO}_{2}$ isolation layer was firstly prepared onto the sidewall and the defined surface of the wafer using the plasma enhanced chemical vapor deposition (PECVD) technique, the TiW barrier layer was prepared onto the ${\rm SiO}_{2}$ layer with the sputtering process, the Cu seed layer was then deposited onto the barrier layer by the sputtering process to provide a foundation for copper growth during electroplated deposition. To achieve the “bottom-up” via-filling, the addictives were added into the copper plating solution. The results showed that the void free Cu filling can be achieved with an optimal additives ratio. The variation in both via opening and depth were found to be key factors influencing the via-filling quality. The process parameters such as current density, power waveform and so on were found to affect the vial filling quality. A comparison on the effects of key process parameters was made, showing that the current density, voltage waveform, and pulse reserve are three key parameters that affect the filling quality more than other parameters.

Effect of Current Density and Plating Time on Cu Electroplating in TSV and Low Alpha Solder Bumping

Effect of Current Density and Plating Time on Cu Electroplating in TSV and Low Alpha Solder Bumping

Influence of Electroplating Current Density on Through Silicon Via Filling

Study on the behaviors of Cu filling in special through-silicon-vias by the simulation of electric field distribution

Effect of leveler on microstructure and stress of electroplated copper for TSV application

Electrochemical Analysis of Cathode in TSV Copper Electroplating

Fabrication and shear strength analysis of Sn-3.5Ag/Cu-filled TSV for 3D microelectronic packaging

Effect of current density on microstructure and mechanical property of Cu micro-cylinders electrodeposited in through silicon vias

Simultaneous filling of through silicon vias (TSVs) with different aspect ratios using multi-step direct current density

Optimization of Cu electrodeposition parameters for Through Silicon Via (TSV)

Optimizing Copper Filling Process For Through Silicon Via (TSV)

Effects of initial Cu grain size and impurity residues on the liquid phase reactions between molten solder and electroplated Cu

Fast copper plating process for TSV fill

Pure Bottom-up filling process for efficient TSV metallization

Research on Effect of Annealing on Copper Deposited by Electroplating in High Density TSV

Cu electroplating chemistry and process enabling rapid TSV filling with long bath life

Parametric study of electroplating-based via-filling process for TSV applications

Research Progress of Copper Electrodeposition Filling Mechanism in Silicon Vias

Advanced TSV Filling Method with Sn Alloy and Its Reliability

Effect of Different Pretreatments on Through Silicon Via Copper Filling

Study of internal stress on electroplating copper used in through silicon via filling