Abstract:The high-quality aluminum nitride (AlN) epilayer is the key factor that directly affects the performance of semiconductor deep-ultraviolet (DUV) photoelectronic devices. In this work, to investigate the influence of thickness on the quality of the AlN epilayer, two AlN-thick epi-film samples were grown on c-plane sapphire substrates. The optical and structural characteristics of AlN films are meticulously examined by using high-resolution X-ray diffraction (HR-XRD), scanning electron microscopy (SEM), a dual-beam ultraviolet-visible spectrophotometer, and spectroscopic ellipsometry (SE). It has been found that the quality of AlN can be controlled by adjusting the AlN film thickness. The phenomenon, in which the thicker AlNn film exhibits lower dislocations than the thinner one, demonstrates that thick AlN epitaxial samples can work as a strain relief layer and, in the meantime, help significantly bend the dislocations and decrease total dislocation density with the thicker epi-film. The Urbach's binding energy and optical bandgap (Eg) derived by optical transmission (OT) and SE depend on crystallite size, crystalline alignment, and film thickness, which are in good agreement with XRD and SEM results. It is concluded that under the treatment of thickening film, the essence of crystal quality is improved. The bandgap energies of AlN samples obtained from SE possess larger values and higher accuracy than those extracted from OT. The Bose–Einstein relation is used to demonstrate the bandgap variation with temperature, and it is indicated that the thermal stability of bandgap energy can be improved with an increase in film thickness. It is revealed that when the thickness increases to micrometer order, the thickness has little effect on the change of Eg with temperature.

Pure electron-electron dephasing in percolative aluminum ultrathin film grown by molecular beam epitaxy

Direct observation of ultrafast thermal and non-thermal lattice deformation of polycrystalline aluminum film

Doubling of the superconducting transition temperature in ultra-clean wafer-scale aluminum nanofilms

Doubling the superconducting transition temperature of ultraclean wafer-scale aluminum nanofilms

Shrunk Lattice Structure and Interdiffusion Characteristics of 5 Nm Thick Al(2)O(3) Ultrathin Films Sputtered on Silicon.

Anomalous Hopping and Tunneling Effects in a New Aluminum Film Percolation System

Interface Engineering and Epitaxial Growth of Single‐Crystalline Aluminum Films on Semiconductors

Effect of Nonequilibrium Transient Electronic Structures on Lattice Stability in Metals: Density Functional Theory Calculations

High Optical Transmittance of Aluminum Ultrathin Film with Hexagonal Nanohole Arrays As Transparent Electrode.

Atomic Layer Deposition of Aluminum (111) Thin Film by Dimethylethylaminealane Precursor

Molecular Beam Epitaxy of Single-Crystalline Aluminum Film for Low Threshold Ultraviolet Plasmonic Nanolasers

Quantum Size Effect Induced Dilute Atomic Layers in Ultrathin Al Films

Study of the Electron–Phonon Relaxation in Thin Metal Films Using Transient Thermoreflectance Technique

Fabrication of Aluminum Oxide Thin-Film Devices Based on Atomic Layer Deposition and Pulsed Discrete Feed Method

Parity effect in superconducting aluminum single electron transistors with spatial gap profile controlled by film thickness

Low Loss Single Crystalline Aluminum Films Obtained on Si (1 1 1) Through Interfacial Modulation

Significant Enhancement in Electromigration Resistance and Texture of Aluminum Films Using an Ultrathin Titanium Underlayer

In-situ Study of the Effect of Strain Path Change on Dislocation Boundary Evolution in Commercial Purity Aluminum

Observation of an Abrupt 3D-2D Morphological Transition in Thin Al Layers Grown by MBE on InGaAs surface

Optical and Structural Properties of Aluminum Nitride Epi-Films at Room and High Temperature

Interdiffusion in epitaxial ultrathin Co2FeAl/MgO heterostructures with interface-induced perpendicular magnetic anisotropy