Doubling the superconducting transition temperature of ultraclean wafer-scale aluminum nanofilms

Ching-Chen Yeh,Thi-Hien Do,Pin-Chi Liao,Chia-Hung Hsu,Yi-Hsin Tu,Hsin Lin,T.-R. Chang,Siang-Chi Wang,Yu-Yao Gao,Yu-Hsun Wu,Chu-Chun Wu,Yu An Lai,Ivar Martin,Sheng-Di Lin,Christos Panagopoulos,Chi-Te Liang
DOI: https://doi.org/10.1103/physrevmaterials.7.114801
IF: 3.98
2023-11-04
Physical Review Materials
Abstract:We studied the role of reduced dimensionality and disorder in the superconducting properties of wafer-scale aluminum (Al) nanofilms. This new generation of ultrathin films were grown using molecular beam epitaxy and depict normal-state sheet resistance at least 20 times lower than the quantum resistance h/(4e2) . Defying general expectations, the superconducting transition temperature of our films increases with decreasing Al film thickness, reaching 2.4 K for a 3.5-nm-thick Al film grown on GaAs: twice that of bulk Al (1.2 K). Surface phonon softening is shown to impact superconductivity in pure ultrathin films, offering a route for materials engineering in two dimensions. https://doi.org/10.1103/PhysRevMaterials.7.114801 ©2023 American Physical Society
materials science, multidisciplinary
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