Superconducting nitridized-aluminum thin films

Alba Torras-Coloma,Leyre Martínez de Olcoz,Eva Céspedes,Elia Bertoldo,David López-Núñez,Sagar Paul,Wolfgang Wernsdorfer,Gemma Rius,Pol Forn-Díaz

DOI: https://doi.org/10.1088/1361-6668/ad20fc

2024-04-08

Abstract:We report the direct observation of superconductivity in nitridized-aluminum thin films. The films are produced by sputtering deposition of aluminum in a controlled mixture of nitrogen diluted in argon. The concentration of applied nitrogen directly determines the properties of the superconducting thin films. We observe samples displaying critical temperatures up to 3.38$\pm$0.01K and resilience to in-plane magnetic fields well above 1T, with good reproducibility of the results. This work represents an unambiguous demonstration of tunable superconductivity in aluminum-based nitridized thin films. Our results put forward nitridized aluminum as a promising material to be employed in superconducting quantum circuits for quantum technology applications.

Superconductivity,Quantum Physics

What problem does this paper attempt to address?

The paper attempts to address the problem of finding a new type of superconducting material for applications in quantum technology. Specifically, the researchers prepared aluminum nitride (NitrAl) films at different nitrogen concentrations using sputter deposition technology and conducted detailed characterization of their superconducting properties. The main objectives of the paper include:

1. **Exploring the possibility of aluminum nitride as a superconducting material**: The study investigates the superconducting characteristics of aluminum nitride films at different nitrogen concentrations, observing changes in their critical temperature (Tc) and other physical properties.

2. **Improving the performance of superconducting materials**: By adjusting the ratio of nitrogen to argon, the researchers were able to control the superconducting properties and room temperature resistivity of the films. The results showed that some aluminum nitride samples exhibited higher critical temperatures than pure aluminum (up to 3.38 K) and maintained superconductivity under in-plane magnetic fields (with field strengths exceeding 1 T).

3. **Validating the potential of aluminum nitride as a material for quantum circuits**: Experimental results indicate that aluminum nitride films have controllable superconducting properties, making them a promising material for future applications in quantum technology. Particularly in scenarios requiring high magnetic field compatibility, such as semiconductor spin qubits or topological condensed matter systems, aluminum nitride shows good application potential.

In summary, this paper aims to demonstrate the potential application value of aluminum nitride as a new type of superconducting material in the field of quantum technology, laying the foundation for its further research and development.