Abstract:At the present time, ultrahigh performance superconducting nanowire single-photon detectors are the key elements in a variety of devices from biological research to quantum communications and computing. Accurate tuning of superconducting material properties is a powerful resource for fabricating single-photon detectors with desired properties. Here, we report on the major theoretical relations between ultrathin niobium nitride (NbN) film properties and superconducting nanowire single-photon detector characteristics, as well as the dependence of ultrathin NbN film properties on reactive magnetron sputtering recipes. Based on this study, we formulate the exact requirements for ultrathin NbN films for ultrahigh performance superconducting nanowire single-photon detectors. Then, we experimentally studied the properties of ultrathin NbN films (morphology, crystalline structure, critical temperature, and sheet resistance) on silicon, sapphire, silicon dioxide, and silicon nitride substrates sputtered with various recipes. We demonstrate ultrathin NbN films (obtained with more than 100 films deposition) with a wide range of critical temperature from 2.5 to 12.1 K and sheet resistance from 285 to 2000 Ω/sq and report a sheet resistance evolution of more than 40% within two years. Finally, we found out that one should use ultrathin NbN films with a specific critical temperature near 9.5 K and a sheet resistance of about 350 Ω/sq for ultrahigh performance state-of-the-art superconducting nanowire single-photon detectors at 1550 nm wavelength.

Superconducting niobium nitride thin films deposited by metal organic plasma-enhanced atomic layer deposition

Ultrathin epitaxial NbN superconducting films with high upper critical field grown at low temperature

Atomic Layer Deposition Niobium Nitride Films for High-Q Resonators

Plasma-enhanced atomic layer deposition of titanium nitride for superconducting devices

Superconducting properties of very high quality NbN thin films grown by high temperature chemical vapor deposition

TiN/AlN Nano Multilayers Film Fabricated by Plasma Enhanced Atomic Layer Deposition

High Performance Ultra-Thin Niobium Films for Superconducting Hot-Electron Devices

Controlling the Superconducting Critical Temperature and Resistance of NbN Films through Thin Film Deposition and Annealing

Anodization-based process for the fabrication of all niobium nitride Josephson junction structures

Characterizations of NbAlO Thin Films Grown by Atomic Layer Deposition

Doped SnO2 thin films fabricated at low temperature by atomic layer deposition with a precise incorporation of niobium atoms

Surface morphology and superconductivity of Nb thin films by biased target ion beam deposition

Room temperature deposition of superconducting niobium nitride films by ion beam assisted sputtering

Atomic layer deposition and superconducting properties of NbSi films

Ion-beam Assisted Sputtering of Titanium Nitride Thin Films

Substrate mediated nitridation of niobium into superconducting Nb2N thin films for phase slip study

Tunneling spectroscopy of superconducting MoN and NbTiN grown by atomic layer deposition

The physical properties of cubic plasma-enhanced atomic layer deposition TaN films

[Fabrication and Study of Sputtered NbN Thin Films].

NbN Films on Flexible and Thickness Controllable Dielectric Substrates

Sputtered NbN films for ultrahigh performance superconducting nanowire single-photon detectors