Abstract:Recent applications require vertical chip stacking to increase the performance of many devices without the need of advanced node components. Image sensors and vision systems will embed more and more smart functions, for instance, image processing, object recognition, and movement detection. In this perspective, the combination of Cu-to-Cu direct hybrid bonding technology with Through-Silicon-Via (TSV) will allow 3D interconnection between pixels and the associated computing and memory structures, each function fabricated on a separate wafer. Wafer-to-wafer hybrid bonding was achieved with multi-pitch design—1–4 μm—of single levels of Cu damascene patterned on 300 mm silicon substrates. Defect-free bonding, as far as the extreme edge of the wafer, was demonstrated on a stack with three wafers. Middle wafers thinning was done with grinding only and with a thickness uniformity (TTV) <2 μm to an ultimate thinning as low as 3 μm. Alignment performance was characterized by post-bonding for two superposed hybrid bonding interfaces. In our set of wafers, modeling the alignment with translation, rotation, and scaling components enables us to optimize the residuals down to 3σ < 100 nm. A process flow of thin TSV with a fine pitch of 2 μm for high-density vertical interconnect through a three-wafer stack was developed. Via-last TSV architecture was adopted with 1 μm TSV diameter and 10 μm thickness. Lithography, etching solutions, Ti/TiN barrier deposition, and void-free Cu filling solutions were demonstrated. TSV cross sections after CMP and connections with top and bottom Cu damascene lines show good profile control. Process developments are matured and can be reliably used in the fabrication of an electrical test vehicle including vertical interconnects associating multi-wafers stacking with a hybrid bonding process and high-density thin TSV applicable to low pitches (<5 μm).

Reliability studies on micro-joints for 3D-stacked chip

3D Chip Stack Technology Using Through-Chip Interconnects

The Interfacial Thermo-Mechanical Reliability of 3D Memory-Chip Stacking with Through Silicon Via Array

Novel design and reliability assessment of a 3D DRAM stacking based on Cu-Sn micro-bump bonding and TSV interconnection technology

On Effective and Efficient In-Field TSV Repair for Stacked 3D ICs

The fatigue failure analysis of 3D SiP with Through Silicon Via

Effects of Bonding Parameters on the Reliability of Fine-Pitch Cu/Ni/SnAg Micro-Bump Chip-to-Chip Interconnection for Three-Dimensional Chip Stacking

Performance and reliability study of TGV interposer in 3D integration

A 3D Integration Testing Vehicle with TSV Interconnects

On Effective Tsv Repair For 3d-Stacked Ics

System-Level Analysis of 3D ICs with Thermal TSVs

Power Integrity Modeling, Measurement and Analysis of Seven-Chip Stack for TSV-based 3D IC Integration

3D Finite Element Simulation Study of Chip Stacking Structure Considering Different Numbers of Stacked Dies and the Effects of Underfill and Intermetallic Compound Layer of Micro joints

Materials, Processing and Reliability of Low Temperature Bonding in 3D Chip Stacking

Reliability Simulation of Metal Bump in A Three-Dimensional Chip Stacking Structure

Steady state and transient thermal analysis of hot spots in 3D stacked ICs using dedicated test chips

Thermal-mechanical Reliability Assessment of TSV Structure for 3D IC Integration

Quality Evaluation and Simulation of Through-Multilayer Tsv Integration Process for Memory Stacking

On Effective Through-Silicon Via Repair for 3-D-stacked ICs

Testing 3D chips containing through-silicon vias

Three-dimensional hybrid bonding integration challenges and solutions toward multi-wafer stacking