Systematic investigation on anode etching residue widely generated in manufacturing of low‐temperature polycrystalline‐Si active matrix organic light‐emitting diode

Yu Jin,Wei Ao,Bin Liu,Yunlei Lu,Lei Li,Wangfeng Xi,Jijun Jiang,Mingdong Ma,Fei Hu,Dongzhi Fu,Dongping Wang,Enlai Wang,Song Jiang

DOI: https://doi.org/10.1002/jsid.1098

2022-01-20

Journal of the Society for Information Display

Abstract:Etching residue is a kind of thorny technological issue in the manufacturing of flat panel. In this work, we report on a systematic investigation on anode etching residue which is widely generated in the manufacturing of low temperature polycrystalline Si‐active matrix organic light emitting diode (LTPS‐AMOLED). Firstly, we proposed three kinds of residue formation mechanisms, including the Bernoulli equation‐based dynamic process, as well as two other situations caused by absence of electrochemical accelerated reaction and organic residue in preprocessing, respectively. Then, residue related failure model of product defects was clarified and considered to give rise to ~3.1% product yield loss owing to the related phenomenon named dark line. Finally, we provided three solutions based on the formation mechanism and failure model, and superior process and design implementation conditions were obtained with detailed experimental verifications, which can be promising methods to solve other related issues in the manufacturing to bring cost down. During anode etching process of LTPS‐AMOLED array backplane fabrication, anode bottom‐ITO residue will widely form on the edge of COF PLA, involving in the formation of a U‐shaped loop to short‐circuit adjacent IC bumps to result in dark line defect.

engineering, electrical & electronic,materials science, multidisciplinary,optics,physics, applied