Abstract:The InGaZnO thin film transistor (IGZO TFT) backplane combined with Cu interconnection has nearly an order of magnitude lower in the ability to withstand voltage than that of traditional a-Si TFT backplane on the production line. The breakdown voltage of Mo/Cu interconnection between data line and gate line is only about 60% of that of traditional a-Si TFT backplane. The electrostatic discharge (ESD) breakdown of Mo/Cu:SiNx/SiO2:Mo/Cu structure has become an important factor affecting the normal display of IGZO TFT ultra high definition (UHD) panel. We find that the anti-ESD damage ability of IGZO TFT devices needs matching with the anti-ESD damage ability of interlayer Cu interconnection in order to achieve a high-robustness IGZO TFT backplane. The position of ESD damage in IGZO TFT backplane is commonly in the climbing place where the data line crosses the scanning line. In this paper, a Cu diffusion model is proposed to explain the mechanism for the ESD failure of interlayer Cu interconnection. The Cu metal in gate line diffuses into SiNx/SiO2 gate insulator, and Cu metal at the corner of data line, where the date line crosses the gate line, diffuses into SiO2 film on the date line. The selection conditions of three kinds of protection architectures for ESD protection circuits around Cu interconnection, i.e. R-type, R-half-type, and Diode-type protection architectures, are proposed. On the basis of process optimization such as Cu metal film forming and Cu metal interface treatment, an ESD protection method for the Cu interconnection periphery of IGZO TFT backplane with high robustness is proposed. For the stable production process of IGZO TFT, combined with the design window of ESD protection circuit, the peripheral ESD protection circuit of Cu interconnect is designed with diode-type protection circuit on the IGZO TFT backplane of large-sized UHD and QUHD panel, which effectively improves the effect of interlayer Cu interconnection of IGZO TFT backplane on ESD damage. Through the production verification, it is proved that the metal diffusion of Cu interconnection on IGZO TFT backplane is the fundamental reason for reducing the anti-ESD damage ability of Mo/Cu:SiNx/SiO2:Mo/Cu structure. The rationality of the proposed ESD damage model for interlayer Cu interconnection is verified, which provides a theoretical basis for subsequent IGZO TFT backplane design with high robustness.

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Failure analysis of ESD damage on interconnects in LCD GOA

1.3: An Evaluation Method of TFT Integrated Gate Driver for UHD Display

Electro-static Discharge Failure Analysis and Design Optimization of Gate-Driver on Array Circuit in InGaZnO Thin Film Transistor Backplane

Electro-static Discharge Protection Analysis and Design Optimization of Interlayer Cu Interconnection in InGaZnO Thin Film Transistor Backplane

Adjusting Cu layer thickness of ITO/Cu/ITO film to improve electrochemical corrosion of GOA unit

Adjusting Indium-Tin-oxide Film Thickness to Improve Electrochemical Corrosion Resistance of Gate Driver on Array

64‐5: Virtual ESD Failure Detection Methodology for Oxide TFT Based OLED Panels

Influence of Indium Tin Oxide Residues on Electrical Performance of Hydrogenated Amorphous Silicon Thin Film Transistors in Backplane of Active Matrix Displays

Systematic investigation on anode etching residue widely generated in manufacturing of low‐temperature polycrystalline‐Si active matrix organic light‐emitting diode

Adjusting Ag deposition power to improve corrosion resistance of ITO/Ag/ITO film for gate driver on array

Adjusting Photoresist Curing Temperature to Eliminate Electrostatic Breakdown from Etching Residues

P‐2: Effect of Buffer Layer on Performance and Reliability of Flexible a‐IGZO TFTs Fabricated on Colorless Polyimide of G4.5

Improving Reliability of a-InGaZnO TFTs With Optimal Location of Al2O3 Passivation in Moist Environment

Design and Application of LCD Electronic Limit Sample for Particle Gap

P‐46: Fabrication and Characterization of Thick Cu Films Deposited on G8.5 LCD Glass Substrates for 8k and Large TV Panels

9‐3: Advanced Process and Structure of Backplane for Micro LED Display

24.3: Short‐Channel Indium‐Gallium‐Zinc Oxide Thin‐Film Transistor Enabled by Thermal Dehydrogenation and Oxidizing Defect‐Suppression

Application of Laser Chemical Vapor Deposition in Repairing TFT-LCD Circuit Defects

P‐7.19: Investigation on the Stress of Color Filter and Subsequent Failure Behavior of COA Structure

Half-Buried Structure Cu Bus Line in TFT LCD