Abstract:Low temperature preparable p-type transparent conductors are indispensable for flexible transparent electronics. The current research interest in p-type transparent conductors is mainly focused on wide-band gap copper-based oxides. However, the performance of these oxides is generally inferior to their n-type counterparts, and their high preparation temperature is unfavorable for flexible electronic applications. CuI is a p-type transparent conductor that can be prepared at low temperatures and possesses properties comparable to n-type transparent conductors. The commonly used method for preparing CuI films is iodination of Cu films. However, CuI films produced by this method have a frosted-glass-like appearance, the electrical properties are difficult to be regulated, thus is not suitable for electronic devices. In this paper, we have successfully developed CuI−Cu 2 O composite films with enhanced surface morphology and electronic properties at room temperature. Cu 2 O inhibits the movement of CuI grain boundaries during the iodination process, resulting in a reduction of CuI grain size and a polycrystalline organization with a smoother surface. Due to the increased concentration of grain boundaries in the films and the charge redistribution between Cu 2 O and CuI, the hole concentration in the films decreases and the hole mobility increases. The conductivity of the films increases and then decreases as the Cu 2 O content rises. For CuI−Cu 2 O films with optimized Cu 2 O composition, the transparency in the visible region is 70-80%, the hole concentration is 6.16×1018 cm -3 , the hole mobility is 25.40 cm 2 V -1 s -1 , and the conductivity is 18.57 S cm -1 . After 6 months of aging, the electrical properties of CuI−Cu 2 O films are more stable than those of pure CuI films. These findings will accelerate the wide application of CuI films in transparent electronics.

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