Abstract:Insulated Gate Bipolar Transistors (IGBTs) are critical power components used in electric vehicles, new energy systems, and industrial automation applications. As the performance requirements for power devices continues to grow, ensuring IGBT reliability has become a significant challenge due to the high currents and severe temperature variations during operation, especially during the long period of working conditions. One of the common failures, i.e., the propagation of cracks in the package, can seriously affect the electrical and thermal performance of IGBTs, such as the reduced efficiency, increased power dissipation, and ultimately device damage. Previous studies have focused on reliability testing with little consideration of the actual operating conditions. Therefore, a deeper understanding of crack propagation under in-service conditions is essential to help improve the reliability of power devices. This study focuses on the crack propagation in a typical IGBT with a transistor outline (TO) package under its in-service conditions. Three-dimensional (3D) structures of the IGBT package were built in Abaqus according to the designed dimensions. A user subroutine was developed to involve the power dissipation on the chip as a function of case temperature to simulate the operating conditions. The crack propagation was predicted along vulnerable interfaces using the 3D virtual crack closure technique (VCCT) which assumes that the energy required to close a crack is the same as that required to create it. The energy release rate calculated along straight crack and quarter circular crack fronts showed that shear modes primarily drive crack propagation and the most vulnerable interface is at between the epoxy molding compound (EMC) and exposed pad.

2D-TCAD Simulation Study of Capture Layer and Repellent Layer of Current Filament in Trench-Gate IGBTs

A Coupled 3D Finite Element-Circuit Model for the Numerical Analysis of Small Time Scale Transients of an Insulated Gate Bipolar Transistor Power Electronics Device

Effects of Current Filaments on IGBT Avalanche Robustness: A Simulation Study

A Network Topological Approach-Based Transient 3-D Electrothermal Model of Insulated-Gate Bipolar Transistor

On-state Analytical Modeling of IGBTs with Local Lifetime Control

Modeling and Stability Analysis for a Closed Loop Active IGBT Gate Drive

The trench Insulated Gate Bipolar Transistor— a high power switching device

2-D Modelling and Optimisation of Trench Insulated Gate Bipolar Transistors (TIGBT)

Study of IGBTs Reliability under Coupled Electrical–Thermal Environment

2D Simulation of Single Event Burnout in IGBT

Physical Model Analysis During Transient for Series-Connected HVIGBTs

Over dV/dt Robustness of Switching Behavior of SiC MOSFET and a Novel Main Junction Region Design

Design and Simulation of a Novel Gate Bipolar Transistor Device—FS-CIGBT

The Crack Propagation Analysis in an IGBT Package under In-Service Conditions by VCCT

HV-LDMOS Device Engineering Insights for Moving Current Filament to Enhance ESD Robustness

Turn-OFF dV/dt Controllability in 1.2-kV MOS-Bipolar Devices

Modeling and Analysis of IGBT Based on Two-Dimensional Charge Distribution

Electro-thermo-mechanical analysis and modelling of high-power Intergrated Gate Commutated Thyristors

Enhanced Conduction Characteristics in SiC IGBT with Floating P-Grid Shielded Thick Current Storage Layer

Thermo-fluid Simulation of the Advanced IGBT Module in a Power Stack

Electro-Thermo-Mechanical Analysis and Modeling of High-Power Intergrated Gate Commutated Thyristors