Abstract:Several microstructural parameters can be obtained from the HWHM (half width at half maximum) GAMMA of the TO-like mode and the peak positions in the Raman spectra of non-crystalline silicon materials (including multilayer and single thick films). These are the rms bond angle variation DELTA-theta = (GAMMA - 7.5)/3 (deg) [1], the average distortion energy per bond (u) of the interface, and the stress near the interface (sigma), in a-Si:H layers. The grain size of the mu-c-Si films can be also obtained from DELTA-d approximately 2-pi(B/DELTA-omega(TO))1/2[2]. The distortion energy is given by U = 3K(r-DELTA-theta-BAR)2, where K and r are the force constant of Si (9.2 x 10(3) dyn/cm2) and the bond length of Si (2.4 x 10(-8) cm) [3], respectively. Sigma is equal to n x DELTA-U, n is the total number of distorted Si-Si bonds per unit area near the interface, and DELTA-U is the average excess distortion energy. The microstructural parameters of thick single mu-c-Si:B films and different composition-modulated superlattices are compared when the following quantities are changed: (1) d(s) (thickness of the a-Si:H layer), (2) R (the NH3/SiH4 ratio). The microstructures can well be understood after proper theoretical models are adopted, i.e., using the Peierls-Nabarro model, it can be explained that the stress near the interface is inversely proportional to the thickness of the a-Si:H layer (d(s)) within the range of a few monolayers. The Pantelides model can be used to explain the overcoordination of nitrogen in the a-Si:H layer near the interface.

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Formation of Wavy Crack Morphology in Silicon Oxide Films Due to Collaborative Interface Debonding

Stress-dependent Molecular Pathways of Silica–water Reaction

Molecular Dynamics Simulation for Intrinsic Stress Caused by Surface Oxidation on Hydrogenated Amorphous Silicon

Critical Loading Conditions of Amorphization, Phase Transformation, and Dilation Cracking in 6h‐silicon Carbide

Thermally Induced Structural Evolution of Silicon- and Oxygen-Containing Hydrogenated Amorphous Carbon: A Combined Spectroscopic and Molecular Dynamics Simulation Investigation.

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The cracking mechanism of silicon particles in an A357 aluminum alloy

Observation and Model of Highly Ordered Wavy Cracks Due to Coupling of In-Plane Stress and Interface Debonding in Silica Thin Films

Nanomechanical investigation of the interplay between pore morphology and crack orientation of amorphous silica

Cracking to Curling Transition in Drying Colloidal Films

Examination of crack path in silicon multi-crystals

Understanding the Changes in Mechanical Properties Due to the Crystalline-to-amorphization Transition in SiC

Stress-driven oxidation chemistry of wet silicon surfaces

Predicting the Fracture Propensity of Amorphous Silica Using Molecular Dynamics Simulations and Machine Learning

Microstructural Studies of Noncrystalline Solid Silicon Films by To-Like Modes of Raman-Spectra

Determination of fracture toughness of thin-film amorphous silicon using spiral crack structures

Nanoscale experimental study of the morphology of a microcrack in silicon by transmission electron microscopy

Numerical Simulation Study for Analysis of Hydrogenated Amorphous Silicon/Crystalline Silicon Heterostructure by Reactive Molecular Dynamics Method