Facile preparation of vanadium oxide thin films on sapphire(0001) by sol–gel method

Y. X. Guo,C. W. Zou,Y. F. Liu,Y. Q. Xu,X. L. Wang,J. Y. Yu,Z. Y. Yang,F. Zhang,R. Zhou
DOI: https://doi.org/10.1007/s10971-014-3271-2
2014-01-14
Abstract:Vanadium oxide (VOx) thin films were deposited onto sapphire by sol–gel method at various preparation conditions. The films with soaking time of 1 h present V2O3(006) preferred orientation. As the annealing temperature increasing from 430 to 580 °C, the ratio of the V2O3 compound in the obtained film increases, and the related crystallinity improves as well. However, the films with soaking time of 7 h show high-oriented VO2(020) structure instead of V2O3(006), showing clear grain structure and distinct phase transition property. Based on the process of thermal decomposition of predecessor, a reduction mechanism has been proposed to explain the current experimental results well.
materials science, ceramics
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