An efficient and reliable growth method for epitaxial complex oxide films by molecular beam epitaxy

T. W. Zhang,Z. W. Mao,Z. B. Gu,Y. F. Nie,X. Q. Pan
DOI: https://doi.org/10.1063/1.4990663
IF: 4
2017-07-03
Applied Physics Letters
Abstract:Transition metal oxide heterostructures and interfaces host a variety of exciting quantum phases and can be grown with atomic-scale precision by utilising the intensity oscillations of in situ reflection high-energy electron diffraction. However, establishing a stable oscillation pattern in the growth calibration of complex oxide films is very challenging and time consuming. Here, we develop a substantially more efficient and reliable growth calibration method for complex oxide films using molecular beam epitaxy.
physics, applied
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