Constructing Oxide Interfaces and Heterostructures by Atomic Layer-By-Layer Laser Molecular Beam Epitaxy
Qingyu Lei,Maryam Golalikhani,Bruce A. Davidson,Guozhen Liu,Darrell G. Schlom,Qiao,Yimei Zhu,Ravini U. Chandrasena,Weibing Yang,Alexander X. Gray,Elke Arenholz,Andrew K. Farrar,Dmitri A. Tenne,Minhui Hu,Jiandong Guo,Rakesh K. Singh,Xiaoxing Xi
DOI: https://doi.org/10.1038/s41535-017-0015-x
IF: 6.856
2017-01-01
npj Quantum Materials
Abstract:Advancements in nanoscale engineering of oxide interfaces and heterostructures have led to discoveries of emergent phenomena and new artificial materials. Combining the strengths of reactive molecular-beam epitaxy and pulsed-laser deposition, we show here, with examples of Sr 1+ x Ti 1- x O 3+δ , Ruddlesden–Popper phase La n +1 Ni n O 3 n +1 ( n = 4), and LaAl 1+ y O 3(1+0.5 y ) /SrTiO 3 interfaces, that atomic layer-by-layer laser molecular-beam epitaxy significantly advances the state of the art in constructing oxide materials with atomic layer precision and control over stoichiometry. With atomic layer-by-layer laser molecular-beam epitaxy we have produced conducting LaAlO 3 /SrTiO 3 interfaces at high oxygen pressures that show no evidence of oxygen vacancies, a capability not accessible by existing techniques. The carrier density of the interfacial two-dimensional electron gas thus obtained agrees quantitatively with the electronic reconstruction mechanism.