In Situ Monitoring of Composition and Sensitivity to Growth Parameters of Pulsed Laser Deposition

Thomas Orvis,Harish Kumarasubramanian,Mythili Surendran,Shanmukh Kutagulla,Austin Cunniff,Jayakanth Ravichandran
DOI: https://doi.org/10.1021/acsaelm.1c00024
IF: 4.494
2021-02-25
ACS Applied Electronic Materials
Abstract:Complex oxides with perovskite structure have been widely studied for their diverse functional properties. When dimensionally reduced to epitaxial thin films and heterostructures, these properties are frequently tunable, and the symmetry breaking inherent to thin film structures can result in emergent phenomena and properties. However, the ability to control and harness these structures relies on an atomic-level understanding and control of the growth process, made challenging by the lack of suitable <i>in situ</i> compositional characterization tools. In this work, the compositional dependence of SrTiO<sub>3</sub> on pulsed laser deposition growth parameters is investigated with <i>in situ</i> Auger electron spectroscopy and <i>ex situ</i> thin film X-ray diffraction and verified with a simple escape depth model. We show that this is a suitable technique for monitoring subtle compositional shifts occurring during the deposition process, with broad implications for the continued development of thin film synthesis techniques.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsaelm.1c00024?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsaelm.1c00024</a>.Escape depth model; RHEED oscillations; Monte Carlo plume dispersion simulation; and peak-to-peak calculations (<a class="ext-link" href="/doi/suppl/10.1021/acsaelm.1c00024/suppl_file/el1c00024_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.
materials science, multidisciplinary,engineering, electrical & electronic
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