Sub-unit cell layer-by-layer growth of Fe3O4, MgO, and Sr2RuO4 thin films

D. Reisinger,B. Blass,J. Klein,J.B. Philipp,M. Schonecke,A. Erb,L. Alff,R. Gross

DOI: https://doi.org/10.1007/s00339-003-2105-9

2002-08-26

Abstract:The use of oxide materials in oxide electronics requires their controlled epitaxial growth. Recently, it was shown that Reflection High Energy Electron Diffraction (RHEED) allows to monitor the growth of oxide thin films even at high oxygen pressure. Here, we report the sub-unit cell molecular or block layer growth of the oxide materials Sr2RuO4, MgO, and magnetite using Pulsed Laser Deposition (PLD) from stoichiometric targets. Whereas for perovskites such as SrTiO3 or doped LaMnO3 a single RHEED intensity oscillation is found to correspond to the growth of a single unit cell, in materials where the unit cell is composed of several molecular layers or blocks with identical stoichiometry, a sub-unit cell molecular or block layer growth is established resulting in several RHEED intensity oscillations during the growth of a single unit-cell.

Materials Science

What problem does this paper attempt to address?

The key problem that this paper attempts to solve is how to achieve precise monitoring and control of the thin - film growth process during the epitaxial growth of oxide materials, especially under high - oxygen - pressure conditions. Specifically, the author studied the relationship between the Reflection High Energy Electron Diffraction (RHEED) intensity oscillation and the unit - cell - layer growth when growing Sr₂RuO₄, MgO and Fe₃O₄ (magnetite) films from stoichiometric targets by Pulsed Laser Deposition (PLD) technology.

### Main research contents

1. **Molecular - layer or block - layer growth under RHEED monitoring**:
- For oxide materials with complex unit - cell structures, such as Sr₂RuO₄, MgO and Fe₃O₄, RHEED can be used to monitor the formation of molecular - layers or block - layers during their growth processes.
- The author found that in these materials, one RHEED intensity oscillation period does not always correspond to a complete unit - cell - layer, but may correspond to multiple molecular - layers or block - layers.

2. **Specific observation results of different materials**:
- **Sr₂RuO₄**: For Sr₂RuO₄, there are two RHEED intensity oscillations for each unit - cell - layer growth. This is because its unit - cell consists of two identical stoichiometric layers and has a (a + b)/2 displacement in the ab plane.
- **MgO**: For MgO, there are also two RHEED intensity oscillations for each unit - cell - layer growth. This is due to the fact that its unit - cell also consists of two identical stoichiometric layers and has a (a + b)/2 displacement in the ab plane.
- **Fe₃O₄**: For Fe₃O₄, there are four RHEED intensity oscillations for each unit - cell - layer growth. This is because its unit - cell consists of four stoichiometric sub - units, and each sub - unit contains A - sites and B - sites occupied by different Fe³⁺ and Fe²⁺ ions.

3. **Experimental conditions and methods**:
- An Ultra - High - Vacuum Laser Molecular Beam Epitaxy (L - MBE) system was used and combined with in - situ high - pressure RHEED for monitoring.
- Experimental parameters include substrate temperature, oxygen pressure, laser repetition rate and laser energy density, etc.

4. **Result analysis**:
- The film thickness was determined by X - ray Reflectometry, and the number of oscillations corresponding to each unit - cell - layer was calculated in combination with the number of RHEED oscillations.
- The analysis shows that when using stoichiometric targets, the smallest neutral building blocks not only meet the charge - neutrality requirements but also conform to the provided stoichiometric ratio.

### Conclusion

This study shows that under high - oxygen - pressure conditions, RHEED can be effectively used to monitor the molecular - layer or block - layer growth process of oxide materials. For materials with complex unit - cell structures, the number of RHEED oscillations can reflect the number of molecular - layers or block - layers within the unit - cell, thus providing an important reference basis for optimizing growth conditions. This method is helpful for improving the quality and performance of oxide electronic devices.