Abstract:Increasing the power conversion efficiency (PCE) of kesterite Cu2ZnSn(S,Se)4 (CZTSSe) solar cells has remained challenging over the past decade, in part due to open-circuit voltage (VOC)-limiting defect states at the absorber/buffer interface. Previously, we found that substituting the conventional CdS buffer layer with In2S3 in CZTSSe devices fabricated from nanoparticle inks produced an increase in the apparent doping density of the CZTSSe film and a higher built-in voltage arising from a more favorable energy-band alignment at the absorber/buffer interface. However, any associated gain in VOC was negated by the introduction of photoactive defects at the interface. This present study incorporates a hybrid Cd/In dual buffer in CZTSSe devices that demonstrate an average relative increase of 11.5% in PCE compared to CZTSSe devices with a standard CdS buffer. Current density-voltage analysis using a double-diode model revealed the presence of (i) a large recombination current in the quasi-neutral region (QNR) of the CZTSSe absorber in the standard CdS-based device, (ii) a large recombination current in the space-charge region (SCR) of the hybrid buffer CZTSSe-In2S3-CdS device, and (iii) reduced recombination currents in both the QNR and SCR of the CZTSSe-CdS-In2S3 device. This accounts for a notable 9.0% average increase in the short-circuit current density (JSC) observed in CZTSSe-CdS-In2S3 in comparison to the CdS-only CZTSSe solar cells. Energy-dispersive X-ray, secondary-ion mass spectroscopy, and grazing-incidence X-ray diffraction compositional analysis of the CZTSSe layer in the three types of kesterite solar cells suggest that there is diffusion of elemental In and Cd into the absorbers with a hybrid buffer. Enhanced Cd diffusion concomitant with a double postdeposition heat treatment of the hybrid buffer layers in the CZTSSe-CdS-In2S3 device increases carrier collection and extraction and boosts JSC. This is evidenced by electron-beam-induced current measurements, where higher current generation and collection near to the p-n junction is observed, accounting for the increase in JSC in this device. It is expected that optimization of the heat treatment of the hybrid buffer layers will lead to further improvements in the device performance.

Effect of Magnesium Incorporation on Solution-Processed Kesterite Solar Cells

Formation of Alloyed Cu2CoxZn1-xSn(S,Se)4 Absorption Layer and Its Application in Solar Cells.

Formation of Alloyed Cu2Cox Zn1-x Sn(S,Se)4 Absorption Layer and Its Application in Solar Cells

Boosting the Electrical Properties of Cu 2 ZnSn(S,Se) 4 Solar Cells via Low Amounts of Mg Substituting Zn

Influences of Mg concentration in ZnMgO film on energy band alignment at CIGSSe/Zn1-xMgxO interface and performances of CIGSSe solar cells

A new approach for alkali incorporation in Cu2ZnSnS4 solar cells

Influence of Mg concentration in Zn1-Mg O buffer layers for enhanced Cu2(Sn,Ge)S3 solar cells performance

Facile growth of kesterite CZTS film by one-pot hydrothermal route using EDTA as complex agent for heterojunction solar cell applications: influence of zinc concentration

Multinary alloying for facilitated cation exchange and suppressed defect formation in kesterite solar cells with above 14% certified efficiency

Magnesium-Doped Zinc Oxide As Electron Selective Contact Layers for Efficient Perovskite Solar Cells

High Efficiency Cu 2 ZnSn(S,Se) 4 Solar Cells with Shallow Li Zn Acceptor Defects Enabled by Solution‐Based Li Post‐Deposition Treatment

High Efficiency Cu2ZnSn(S,Se)4 Solar Cells with Shallow LiZn Acceptor Defects Enabled by Solution‐Based Li Post‐Deposition Treatment

Optimizing the properties of Cu2ZnSn(S,Se)4 solar cells via cationic substitution with trace Ca

Theoretical study on the kesterite solar cells based on Cu2ZnSn(S,Se)4 and related photovoltaic semiconductors*

Preserving the stoichiometry

Enhanced Carrier Collection in Cd/In-Based Dual Buffers in Kesterite Thin-Film Solar Cells from Nanoparticle Inks

Improving the performance of kesterite solar cells by solution germanium alloying

Structural, Electronic and Defect Properties of Cu<sub>2</sub>ZnSn(S,Se)<sub>4</sub> Alloys

Structural, Electronic and Defect Properties of Cu 2 ZnSn(S,Se) 4 Alloys

Regulating Hetero‐Nucleation Enabling Over 14% Efficient Kesterite Solar Cells

Opto-electronic properties and solar cell efficiency modelling of Cu$_2$ZnXS$_4$ (X=Sn,Ge,Si) kesterites