Facile growth of kesterite CZTS film by one-pot hydrothermal route using EDTA as complex agent for heterojunction solar cell applications: influence of zinc concentration

Nabaa H. Allawi,Selma M. H. Al-Jawad
DOI: https://doi.org/10.1007/s11082-023-05319-1
IF: 3
2023-09-30
Optical and Quantum Electronics
Abstract:The present study focuses on developing a Cu 2 ZnSnS 4 film using ethylenediaminetetraacetic acid as a complexing agent via a one-pot hydrothermal route. The effective Molybdenum oxide (MoO x ) film has been developed along with the Cu 2 ZnSnS 4 film preparation. The influences of various zinc concentrations on structural, optical, and electrical properties were also investigated. X-ray diffraction (XRD) and Raman investigations revealed their development of crystalline kesterite phase Cu 2 ZnSnS 4 films with preferred orientation along the (112) plane. They revealed that structure property changes with zinc concentration: at a lower zinc concentration, Cu 2 ZnSnS 4 and Cu 2−X S phases developed, however with increasing concentrations of zinc (zinc-rich), a single kesterite phase Cu 2 ZnSnS 4 evolved. Raman spectroscopy also verified the presence of a MoO X layer on the Mo substrate. Field emission scanning electron microscopy revealed surface morphology changes from coral reefs to flakes. UV-visible investigation revealed absorbance spectra with high absorption coefficient values exceeding 10 5 cm −1 in the visible and infrared regions. Single-phase (zinc-rich) Cu 2 ZnSnS 4 film's band gap was also anticipated to be 1.42 eV. The photoluminescence investigation of the (zinc-rich) single-phase Cu 2 ZnSnS 4 film revealed an emission peak at 1.569 eV. The Hall Effect investigation demonstrated that the zinc-rich film is a p-type semiconductor with mobility of 15.6 cm −2 Vs −1 , resistivity of 2 Ω cm, and charge carrier concentration of 1 × 10 16 cm −3 . The Mo foil /MoO x /CZTS/Zn 0.35 Cd 0.65 S /ZnO/Al heterojunction solar cell has been constructed well. With an open-circuit voltage of (0.410) V, a short-circuit current density of (12.6) mA/cm 2 and a fill factor of (38.7%), a photovoltaic conversion efficiency of (2%) was achieved under 100 mW/cm 2 .
engineering, electrical & electronic,optics,quantum science & technology
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