Abstract:Advances in applications of nitrogen-vacancy (NV) spin centers in diamond for sensing and quantum metrology depend critically on the NV fabrication methods. One such technique combines epitaxial diamond growth and electron or ion irradiation (He, C, etc.), where NVs are activated by vacancy trapping at the nitrogen donor atoms upon thermal diffusion. In this work we study the efficiency of such method by analyzing NV depth profiles created by 340keV and also 4keV He irradiation in high purity CVD and HPHT diamond crystals and subjected to sequent annealing at 950◦C and 1200◦C temperatures. This analysis is coupled with the measurement of NV density in the bulk of CVD diamonds with nitrogen doping at low-ppb and low-ppm levels, exposed to MeV electrons in a wide range of the doses. For data analysis we developed an atomistic model based on probabilistic atomic jumps in a crystal lattice, which considers competitive trapping between di-(V 2 ) or multi-vacancy defects compared to that of NVs. The efficiency of NV formation was defined as a ratio of the corresponding capture cross sections: σ NV vs. σ V 2 . Applying this model to the experimental data, the σ NV / σ V 2 ratio was estimated about 0.1-to-0.5, where the activation energy of vacancy diffusion of about 1.7 eV was evaluated by 3-D localization of individual NVsin depth profiles in a confocal microscope and sampling their spin coherence properties (T 2 ). In addition, we noted two subsidiary effects also discussed here: (i) reduction of NV density within the stopping range of the implanted He atoms after 1200◦ annealing and, (ii) partial suppression of NVs at near-surface areas visible only at low-dose electron exposures. The results of this study could be helpful to optimize the NV fabrication process reducing the density of "collateral" lattice damage.

Engineering of Fermi level by nin diamond junction for control of charge states of NV centers

Electroluminescence of negatively charged single NV centers in diamond

Optical Manipulation of the Charge State of Nitrogen-Vacancy Center in Diamond

Diamond-defect engineering of NV- centers using ion beam irradiation

NV centres by vacancies trapping in irradiated diamond: Experiments and modelling

Subdiffraction optical manipulation of the charge state of nitrogen vacancy center in diamond

Tailoring of Nitrogen-Vacancy Colour Centers in Diamond Epilayers by in Situ Sulfur and Nitrogen Anion Engineering

Rapid, in-situ neutralization of nitrogen- and silicon-vacancy centers in diamond using above-band-gap optical excitation

Impact of surface and laser-induced noise on the spectral stability of implanted nitrogen-vacancy centers in diamond

Effect of fluorinated diamond surface on charge state of nitrogen-vacancy centers

Electroluminescence of NV0 by Impact Excitation and Stark Shift in a MIM Diamond Structure

Engineered arrays of NV color centers in diamond based on implantation of CN- molecules through nanoapertures

Creation of shallow nitrogen vacancy centers in HPHT diamond surface via catalytic etching of transition metal

Charge state dynamics of the nitrogen vacancy center in diamond under 1064 nm laser excitation

Identifying and mitigating charge instabilities in shallow diamond nitrogen-vacancy centers

High-Throughput Detection and Manipulation of Single Nitrogen-Vacancy Center's Charge in Nanodiamonds

High spatial resolution manipulation of the nitrogen vacancy center charge state in diamond

Optical tuning of the diamond Fermi level measured by correlated scanning probe microscopy and quantum defect spectroscopy

Nitrogen concentration control during diamond growth for NV- centre formation

Fabrication and characterization of diamond nitrogen-vacancy center through argon ions etching