Abstract:Silicon nanostructuring imparts unique material properties including antireflectivity, antifogging, anti-icing, self-cleaning, and/or antimicrobial activity. To tune these properties however, a good control over features size and shape is essential. Here, a versatile fabrication process is presented to achieve tailored silicon nanostructures (thin/thick pillars, sharp/truncated/re-entrant cones), of pitch down to ~50 nm, and high-aspect ratio (>10). The approach relies on pre-assembled block copolymer (BCP) micelles and their direct transfer into a glass hard mask of an arbitrary thickness, now enabled by our recently reported regenerative secondary mask lithography. During this pattern transfer, not only the mask diameter can be decreased but also uniquely increased; constituting the first method to achieve such tunability without necessitating a different molecular weight BCP. Consequently, the hard mask modulation (height, diameter) advances the flexibility in attainable inter-pillar spacing, aspect ratios, and re-entrant profiles (= glass on silicon). Combined with adjusted silicon etch conditions, the morphology of nanopatterns can be highly customized. The process control and scalability enable uniform patterning of a 6-inch wafer which is verified through cross-wafer excellent antireflectivity (<5%) and water-repellency (advancing contact angle 158°; hysteresis 1°). It is envisioned the implementation of this approach to silicon nanostructuring to be far-reaching, facilitating fundamental studies and targeting applications spanning solar panels, antifogging/antibacterial surfaces, sensing, amongst many others.

Fabrication of arrays of tapered silicon micro-/nano-pillars by metal-assisted chemical etching and anisotropic wet etching

Fabrication of Submicrometer Inp Pillars by Colloidal Lithography and Dry Etching

High aspect ratio arrays of Si nano-pillars using displacement Talbot lithography and gas-MacEtch

Optical Device Based on a Nanopillar Array by the Pattern Transfer of an Anodic Aluminum Oxide Membrane

Fabrication of High-Aspect-ratio Silicon Nanopillar Arrays with the Conventional Reactive Ion Etching Technique

Wafer-Scale Fabrication of Ultra-High Aspect Ratio, Microscale Silicon Structures with Smooth Sidewalls Using Metal Assisted Chemical Etching

Fabrication of ultrahigh-aspect-ratio and periodic silicon nanopillar arrays using dislocation lithography and deep reactive-ion etching

Fabrication of Ordered Arrays of Silicon Nanopillars at Selected Sites

Fabrication of ordered arrays of silicon nanopillars in silicon-on-insulator wafers

Wafer Scale Fabrication of Dense and High Aspect Ratio Sub-50 Nm Nanopillars from Phase Separation of Cross-Linkable Polysiloxane/Polystyrene Blend

Low Cost and High‐Aspect Ratio Micro/Nano Device Fabrication by Using Innovative Metal‐Assisted Chemical Etching Method

Elliptical silicon arrays with anisotropic optical and wetting properties

Heterogeneous Optoelectronic Characteristics of Si Micropillar Arrays Fabricated by Metal-Assisted Chemical Etching

Novel route to fabrication of metal-sandwiched nanoscale tapered structures

Size and Morphology Control of Highly-Ordered Nano-Silicon Pillar Fabricated by Direct Nanosphere Lithography

Patterned Microstructure Array Fabrication By Using A Novel Standing Surface Acoustic Wave Device

Fabrication Of Silicon Cones And Pillars Using Rough Metal Films As Plasma Etching Masks

Proximal probe-like nano structuring in metal-assisted etching of silicon

A route to engineered high aspect-ratio silicon nanostructures through regenerative secondary mask lithography

Fabrication of the Highly Ordered Silicon Nanocone Array With Sub-5 nm Tip Apex by Tapered Silicon Oxide Mask

Fabrication of ultra-high-aspect-ratio nano-walls and nano-structures on silicon substrates