Abstract:The output pulse voltage with a front of high dV/dt is an important feature in the application of silicon carbide (SiC) drift step recovery diodes (DSRDs). However, the presence of prepulse leads to a deformation of the pulse front, reducing its mean rising rate. The influence factors and mechanisms of prepulse of 4H-SiC DSRD are investigated in this article. $\eta $ is proposed to evaluate the prepulse characteristics, which is defined as the ratio of the prepulse amplitude ( $\textit{V}_{\text{pre}}\text{)}$ to the peak output voltage ( $\textit{V}_{\text{peak}}\text{)}$ . A good output characteristic should have a low $\eta $ . The experimental results indicate that the device area ( $\textit{S}\text{)}$ , power supply voltage ( $\textit{V}_{\text{cc}}\text{)}$ , and load resistance ( $\textit{R}_{\text{load}}\text{)}$ have a significant impact on the prepulse. Through Sentaurus TCAD simulation, the effects of the three factors on prepulse were further obtained over a larger range of variations. The simulation results agree with the experimental data well. The results indicate that $\textit{V}_{\text{pre}}$ does not depend on $\textit{V}_{\text{peak}}$ . Increasing S, $\textit{R}_{\text{load}}$ , and $\textit{V}_{\text{cc}}$ can all reduce $\eta $ , but only an increase in S can reduce $\textit{V}_{\text{pre}}$ among the three factors. From the perspective of prepulse characteristics, SiC DSRDs are more suitable for application at higher voltage conditions rather than lower voltage, as there is often a lower $\eta $ under higher voltage conditions.

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