Abstract:Voltage driven magnetic switching (VDMS) in multiferroic heterostructure is highly demanded for next generation energy efficient high-density memory (e.g. magnetoelectric random access memory) and spintronic devices. For practical applications in large scale integrated device, it is imperative to understand the VDMS behaviors in nanometer scale. In this work, we have investigated the effects of geometric and anisotropy parameters on 180° VDMS behaviors in a model multiferroic heterostructure system consisting of Co nano-ellipse on BiFeO3 films by using micromagnetic simulation. It was revealed that the switching behaviors can be greatly affected by geometric factors, whereby dimension shrinkage and rising aspect ratio of Co nano-ellipse can apparently increase the critical exchange coupling field (hDMcri-field) needed for triggering the VDMS, greatly reducing the watchability of VDMS. To improve the watchability, an external static perpendicular magnetoanisotropy (Kp) can be introduced to reduce the hDMcri-field, whereas too large Kp tends to reorientate the magnetization towards out-of-plane orientation. Moreover, a strategy was also proposed to assist the VDMS by applying an anisotropy pulse, which is able to reduce the hDMcri-field and expand the switching window (e.g. wider range of aspect ratio and overall dimension size) for both in-plane and out-of-plane VDMS. These results may provide some guides for further experimental modulation of VDMS for device applications.

Spin-orbit torque-induced switching of in-plane magnetized elliptic nanodot arrays with various easy-axis directions measured by differential planar Hall resistance

L-Shaped Electrode Design For High-Density Spin-Orbit Torque Magnetic Random Access Memory With Perpendicular Shape Anisotropy

Field-free switching of perpendicular magnetization by cooperation of planar Hall and orbital Hall effects

Deterministic field-free switching of perpendicular magnetization by spin–orbit torques originating from in-plane magnetized Co2MnAl

Electric-field-driven Deterministic and Robust 120° Magnetic Rotation in a Concave Triangular Nanomagnet

Electrically Driven Reversible Magnetic Rotation in Nanoscale Multiferroic Heterostructures.

Switching of perpendicular magnetization by spin–orbit torques in the absence of external magnetic fields

Geometric and Anisotropy Effects on Voltage Driven Magnetic Switching Behaviors in Nanoscale Multiferroic Heterostructure

Field-Free Spin-Orbit Torque Magnetization Switching in a Single-Phase Ferromagnetic and Spin Hall Oxide

Orthogonal Spin-Orbit Torque-Induced Deterministic Switching in NiO

Field-free spin-orbit torque switching assisted by in-plane unconventional spin torque in ultrathin [Pt/Co]N

Efficient field-free perpendicular magnetization switching by a magnetic spin Hall effect

Probing the magnetization switching with in-plane magnetic anisotropy through field-modified magnetoresistance measurement

Field‐Free Spin‐Orbit Torque Switching of Perpendicular Magnetization by Making Full Use of Spin Hall Effect

Tunable multistate field-free switching and ratchet effect by spin-orbit torque in canted ferrimagnetic alloy

Revisiting the Analytical Solution of Spin-Orbit Torque Switched Nanoscale Perpendicular Ferromagnet

Field free magnetization switching in perpendicularly magnetized Pt/Co/FeNi/Ta structure by spin orbit torque

Field-free and sub-ns magnetization switching of magnetic tunnel junctions by combining spin-transfer torque and spin–orbit torque

Imaging Magnetization Switching Induced by Spin-Orbit Torque in Perpendicularly Magnetized Ta/CoFeB Structure

Out-of-Plane Polarization from Spin Reflection Induces Field-Free Spin-Orbit Torque Switching in Structures with Canted NiO Interfacial Moments

Spin torque switching of perpendicular Ta∣CoFeB∣MgO-based magnetic tunnel junctions