Analysis of Electronic Properties of Silicon Nitride Based on Materials Studio

Liao Yan-Ling,Zhong Zhi-Xian,Wang Jia-Yuan
DOI: https://doi.org/10.1145/3305275.3305340
2018-12-29
Abstract:There are two common phases of silicon nitride, low temperature phase α and high temperature phase β. It is irreversibly transformed into β phase in a single direction when α phase is in high temperature, α phase and β phase can be transformed into other phases of silicon nitride under certain conditions. In this paper, a crystal model of silicon nitride is established based on the CASTEP module of Materials Studio. The interaction between ion core and valence electron is described by using norm-conserving pseudoptential, structural optimization and calculation of β-Si3N4 are performed. The cut-off energy, k-points and other parameters were set by convergence test. Charge-enrichment, electron transfer and gain-loss electrons of β-Si3N4 were analyzed through simulation, the band structure of β-Si3N4 which has been established was calculated. Research results show that the structure of β-Si3N4 is an indirect bandgap semiconductor, and s orbital and p orbital electrons of Si and N in β-Si3N4 directly affect the peak value of the total density of states.
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