Abstract:Wide-bandgap gallium nitride (GaN)-based semiconductors offer significant advantages over traditional Si-based semiconductors in terms of high-power and high-frequency operations. As it has superior properties, such as high operating temperatures, high-frequency operation, high breakdown electric field, and enhanced radiation resistance, GaN is applied in various fields, such as power electronic devices, renewable energy systems, light-emitting diodes, and radio frequency (RF) electronic devices. For example, GaN-based high-electron-mobility transistors (HEMTs) are used widely in various applications, such as 5G cellular networks, satellite communication, and radar systems. When a current flows through the transistor channels during operation, the self-heating effect (SHE) deriving from joule heat generation causes a significant increase in the temperature. Increases in the channel temperature reduce the carrier mobility and cause a shift in the threshold voltage, resulting in significant performance degradation. Moreover, temperature increases cause substantial lifetime reductions. Accordingly, GaN-based HEMTs are operated at a low power, although they have demonstrated high RF output power potential. The SHE is expected to be even more important in future advanced technology designs, such as gate-all-around field-effect transistor (GAAFET) and three-dimensional (3D) IC architectures. Materials with high thermal conductivities, such as silicon carbide (SiC) and diamond, are good candidates as substrates for heat dissipation in GaN-based semiconductors. However, the thermal boundary resistance (TBR) of the GaN/substrate interface is a bottleneck for heat dissipation. This bottleneck should be reduced optimally to enable full employment of the high thermal conductivity of the substrates. Here, we comprehensively review the experimental and simulation studies that report TBRs in GaN-on-SiC and GaN-on-diamond devices. The effects of the growth methods, growth conditions, integration methods, and interlayer structures on the TBR are summarized. This study provides guidelines for decreasing the TBR for thermal management in the design and implementation of GaN-based semiconductor devices.

Quantifying Temperature-Dependent Substrate Loss in GaN-on-Si RF Technology

Performance degradation of some on-chip finite-ground coplanar waveguide (FGCPW)-built passive devices at high temperature

Thermal Effect Simulation of GaN HFETs under CW and Pulsed Operation.

Effect of Buffer Charge Redistribution on RF Losses and Harmonic Distortion in GaN-on-Si Substrates

Numerical investigation on thermal characteristics of GaN HFETs for high power applications

RF Loss Reduction by a Carbon-Regulated Si Substrate Engineering in GaN-based HEMT Buffer Stacks

Thermal Effects on the Performance Degradation of On-Chip Coplanar Waveguide-Based Passive Semiconductor Devices

Ultralow RF Loss for Si-Based GaN Materials with a Variable Power Phosphorus Ion Implantation Method

Investigation and reduction of RF loss induced by Al diffusion at the AlN/Si(111) interface in GaN-based HEMT buffer stacks

AlN/Si interface engineering to mitigate RF losses in MOCVD grown GaN-on-Si substrates

Temperature Dependence of the Surface- and Buffer-Induced Current Collapse in GaN High-Electron Mobility Transistors on Si Substrate

Loss mechanisms in superconducting thin film microwave resonators

Investigating Substrate Loss in MEMS Acoustic Resonators and On-Chip Inductors

Low RF Loss and Low Dislocation Density of GaN Grown on High-Resistivity Si Substrates

Modeling and Fabrication of Ge-on-Si3N4 for Low Bend-Loss Waveguides

Effects of Thermal Boundary Resistance on Thermal Management of Gallium-Nitride-Based Semiconductor Devices: A Review

Simulation Investigation of Effects of Substrate and Thermal Boundary Resistance on Performances of AlGaN/GaN HEMTs

Effect of High Temperature on the Performance of AlGaN/GaN T-Gate High-Electron Mobility Transistors With ~140-nm Gate Length

Evaluation and Analysis of Temperature-Dependent Dynamic $r_{{{\mathrm{ds}}},{{\mathrm{on}}}}$ of GaN Power Devices Considering High-Frequency Operation

A Temperature Analysis of High-power AlGaN/GaN HEMTs

The Effects of Temperature on the Single-Event Transient Response of a High-Voltage (>30 V) Complementary SiGe-on-SOI Technology