A reflection-type vapor cell using anisotropic etching of silicon for micro atomic clocks

Hitoshi Nishino,Motoaki Hara,Yuichiro Yano,Masaya Toda,Yoshiaki Kanamori,Masatoshi Kajita,Tetsuya Ido,Takahito Ono
DOI: https://doi.org/10.7567/1882-0786/ab2a3c
IF: 2.819
2019-06-28
Applied Physics Express
Abstract:This paper reports the design, fabrication and evaluation of a reflection-type optical Rb vapor cellfor chip-scale micro atomic clocks. To reduce the physical package height, the reflection-type vaporcell is developed, in which optical components can be mounted on one side of the vapor cell. A(100)-oriented Si wafer with a cut-off 9.74° toward [011] direction is used to make 45° mirrors byanisotropic wet etching. 90° mirrors are fabricated by Si deep reactive ion etching and surfaceplanarization using H 2 annealing. Following the detection of D1 optical absorption for Rb atoms,coherent population trapping resonance was observed.
physics, applied
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