Abstract:Compared with the two-dimensional atomic crystal materials whose bulk phase is layered originally, the related research of two-dimensional material crystals whose bulk phase is non-layered is still very scarce. The monolayer CuSe studied in this paper belongs to the latter, which is a new honeycomb graphene analogue. Monolayer CuSe is not suitable for application in electronic devices because of its metallic nature. In order to find new two-dimensional atomic crystal materials with excellent performance suitable for application in electronic devices, in this paper, the change of CuSe from metal to semiconductor is realized by external atom modification. The first principle of density functional theory is used to study the energy band structure of monolayer CuSe after adding second periodic atoms at the top, center and bridge sites. The electronic structure of monolayer CuSe with Li and B atoms, including energy band structure, the density of states, differential charge density and crystal orbital Hamiltonian population analysis. The results show that after the addition of Li atom, the transition of CuSe from metallic to semiconductive can be realized at all three positions, and Li atom is more inclined to be modified at the hexagonal center of CuSe, with band gap of about 1.77eV, the Fermi level is biased towards the top of the valence band and exhibits a p-type semiconductor property, and is a direct bandgap semiconductor; Adding B atom at the top of Cu atom can also make CuSe semiconductive, with band gap of about 1.2eV, the conduction band minimum is at the K point, and the valence band maximum is at the Γ point. It belongs to an indirect band gap semiconductor, and the Fermi energy level is biased towards the conduction band minimum, exhibiting the characteristics of an n-type semiconductor. According to the results of differential charge density and crystal orbital Hamiltonian population, the B atom is bound to the top of the monolayer CuSe with the B-Se polar covalent bond. The first principle reveals the realization of metal-to-semiconductor transition from monolayer CuSe to CuXSe (X=Li, B), and the calculation results make it possible to use CuSe in future electronic devices.

Odd–Even Layer Effect of Bismuth Oxychalcogenide Nanosurfaces: A First-Principles Study

Raman Spectra and Strain Effects in Bismuth Oxychalcogenides

Dirac fermions at high-index surfaces of bismuth chalcogenide topological insulator nanostructures

Bi2OS2: a Direct-Gap Two-Dimensional Semiconductor with High Carrier Mobility and Surface Electron States

Density functional theory study of two-dimensional bismuth selenite: layer-dependent electronic, transport and optical properties with spin-orbit coupling.

In-depth Understanding of the Band Alignment and Interface States Scenario in Bi_2O_2Se/SrTiO_3 Ultrathin Heterojunction

In-depth Understanding of the Band Alignment and Interface States Scenario in Bi2O2Se/SrTiO3 Ultrathin Heterojunction

Bismuth Oxychalcogenides: A New Class of Ferroelectric/Ferroelastic Materials with Ultra High Mobility

Observation of Dirac-like surface state bands on the top surface of BiSe

Even-Odd Layer-Dependent Exchange Bias Effect in MnBi2Te4 Chern Insulator Devices

Tailoring electronic properties on Bi$_2$O$_2$Se under surface modification and magnetic doping

Topological Surface State Evolution in Bi_2Se_3 Via Surface Etching

Bi2O2Se: A rising star for semiconductor devices

Hidden Direct Bandgap of Bi 2 O 2 Se by Se Vacancy and Enhanced Direct Bandgap of Bismuth Oxide Overlayer

Even-integer Quantum Hall Effect in an Oxide Caused by Hidden Rashba Effect

Thickness-modulated Electronic Band Structures and Exciton Behavior of Non-Van-der-waals 2D Bi2O2Se Films

Odd-Even Layer-Number Effect and Layer-Dependent Magnetic Phase Diagrams in MnBi2Te4

Communication: Surface Stability and Topological Surface States of Cleaved Bi2se3: First-Principles Studies

Surface modification of CuSe:a first-principles study

Topological Surface State Evolution in Bi$_2$Se$_3$ via Surface Etching

Topological Surface State Evolution in Bi2Se3 via Surface Etching