Abstract:Nominally phase-pure γ-Ga2O3 was deposited on (100) MgAl2O4 within a narrow temperature window centered at ∼470 °C using metal-organic chemical vapor deposition. The film deposited at 440 °C exhibited either poor crystallization or an amorphous structure; the film grown at 500 °C contained both β-Ga2O3 and γ-Ga2O3. A nominally phase-pure β-Ga2O3 film was obtained at 530 °C. Atomic-resolution scanning transmission electron microscopy (STEM) investigations of the γ-Ga2O3 film grown at 470 °C revealed a high density of antiphase boundaries. A planar defect model developed for γ-Al2O3 was extended to explain the stacking sequences of the Ga sublattice observed in the STEM images of γ-Ga2O3. The presence of the 180° rotational domains and 90° rotational domains of β-Ga2O3 inclusions within the γ-Ga2O3 matrix is discussed within the context of a comprehensive investigation of the epitaxial relationship between those two phases in the as-grown film at 470 °C and the same film annealed at 600 °C. The results led to the hypotheses that (i) incorporation of certain dopants, including Si, Ge, Sn, Mg, Al, and Sc, into β-Ga2O3 locally stabilizes the “γ-phase” and (ii) the site preference(s) for these dopants promotes the formation of “γ-phase” and/or γ-Ga2O3 solid solutions. However, in the absence of such dopants, pure γ-Ga2O3 remains the least stable Ga2O3 polymorph, as indicated by its very narrow growth window, lower growth temperatures relative to other Ga2O3 polymorphs, and the largest calculated difference in Helmholtz free energy per formula unit between γ-Ga2O3 and β-Ga2O3 than all other polymorphs.

Epitaxial growth of MgO on (100)GaAs using ultrahigh vacuum electron‐beam evaporation

Electronic structure of the interface of GaAs(100) with MgO overlayer grown by thermal evaporation of Mg in O2 under UHV

Heteroepitaxial Growth of MgO Films by Dual Ion Beam Sputtering

Electronic structure of the interface of GaAs(1 0 0) with MgO overlayer grown by thermal evaporation of Mg in O2 under UHV

Growth of Single-Crystalline, Atomically Smooth MgO Films on Ge(001) by Molecular Beam Epitaxy

Structural and Optical Studies of Mg(X)Zn(1-X)Ofilms Grown on Sapphire

Cubic Mgxzn1-Xo Films Grown on Si(111)

Characterizations of Cubic ZnMgO Films Grown on Si(111) at Low Substrate Temperature

Epitaxial Growth of Mgxca1-Xo on Gan by Atomic Layer Deposition

Electron beam evaporation of oriented Nb films onto GaAs crystals in ultrahigh vacuum

Growth of Cubic MgxZn1-xO Films and Characterization

Epitaxiall Growth of Cubic and Hexagonal Gan Films on Gaas(001) Substrates by Mbe

GROWTH OF MgO THIN FILMS ON Si SUBSTRATES BY MAGNETRON SPUTTERING

MnO(001) thin films on MgO(001) grown by reactive MBE using supersonic molecular beams

Atomic-scale investigation of γ-Ga2O3 deposited on MgAl2O4 and its relationship with β-Ga2O3

Selective epitaxial growth of GaAs on Ge by MOCVD

High-index Cu2O (113) Film on Faceted MgO (110) by Molecular Beam Epitaxy

Microstructures of GaN films grown by low pressure metal-organic vapor phase epitaxy on (0 1 1 2) sapphire substrates

Growth of Atomically Smooth Mgo Films on Graphene by Molecular Beam Epitaxy

Microstructures of GaN films grown by low pressure metal-organic vapor phase epitaxy on sapphire substrates

Epitaxial growth of α-(Al x Ga1− x )2O3 by suboxide molecular-beam epitaxy at 1 μm/h