Electronic structure of the interface of GaAs(100) with MgO overlayer grown by thermal evaporation of Mg in O2 under UHV

Faqiang Xu,Haibin Pan,Wenhua Zhang,Guodong Wang,Zongmu Li,Pengshou Xu
DOI: https://doi.org/10.1016/j.elspec.2005.01.240
IF: 1.993
2005-01-01
Journal of Electron Spectroscopy and Related Phenomena
Abstract:Abstract Thermal evaporation of Mg in oxygen atmosphere under UHV condition was conducted to fabricate ultrathin MgO film over GaAs(1 0 0) substrate at room temperature ( T R ). Synchrotron Radiation Photoemission Spectroscopy (SRPES) results show that very weak interaction and interdiffusion exist between the oxide overlayer and substrate indicating that the reaction between Mg and O 2 is much more active than that between Mg with GaAs. The growth of MgO overlayer may be expected in such a mode that Mg reacts with O 2 in gas phase or near surface to form MgO, followed by the deposition of MgO over GaAs(1 0 0).
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