Abstract:Thin film CdTe-based photovoltaic devices have achieved high efficiency above 22 %. The recent improvement in efficiency is due to Se alloying in the CdTe absorbers to form a CdSeTe/CdTe structure. The subsequent band gap grading increases the short circuit current density . The Se can be introduced by depositing a precursor thin film of either CdSe or a CdSeTe alloy and then diffusing the Se into the CdTe during the high temperature cadmium chloride activation process. Using CdSe is preferred because it is easier to control the Se concentration. However, during fabrication of the CdSeTe/CdTe devices, the CdSe thickness needs to be precisely controlled to prevent the retention of a CdSe remnant layer after the activation treatment. Retention of a remnant CdSe layer causes a dramatic reduction in device efficiency. In this work, we show that the reduction in efficiency is caused by a number of factors. The remnant CdSe layer is n-type which moves the position of the p-n junction. Also, it is widely thought that the CdSe remnants are photo-inactive. In this work, we clarify that the individual CdSe grains are actually highly photo-active. However, the grain sizes in the CdSe remnant and the adjacent CdSeTe layer are very small resulting in a high grain boundary area. Although the grain boundaries are passivated with chlorine, cathodoluminescence imaging and electrical measurements show that this is only partially effective. Also, EQE measurements show that the remnant CdSe causes parasitic absorption. Overall, the remnant CdSe layer causes a reduction in short circuit current density and device efficiency. The thickness of the CdSe precursor layer and the cadmium chloride activation process conditions must be precisely optimised to ensure that all the CdSe is consumed and inter-diffused to form the CdSeTe alloy for highest efficiency devices.

Radiative Efficiency and Charge‐Carrier Lifetimes and Diffusion Length in Polycrystalline CdSeTe Heterostructures

As‐Doped Polycrystalline CdSeTe: Localized Defects, Carrier Mobility and Lifetimes, and Impact on High‐Efficiency Solar Cells

The phase segregation in CdTe/CdS heterojunction and its effect on photo current of CdTe thin films solar cell

Buried junction and efficient carrier separation in CdSexTe1−x/CdTe solar cells

Investigation of Sub‐Bandgap Emission and Unexpected n‐Type Behavior in Undoped Polycrystalline CdSexTe1‐x

Passivation mechanism in CdTe solar cells: The hybrid role of Se

The effect of remnant CdSe layers on the performance of CdSeTe/CdTe photovoltaic devices

Enhancing CdTe Solar Cell Performance by Reducing the "Ideal" Bandgap of CdTe through CdTe1-xSex Alloying

Performance of State-of-the-Art CdTe-Based Solar Cells: What Has Changed?

The study on saturation current and ideality factor of CdTe solar cell based on CdS window layer deposited with hydrogen peroxide

20%-efficient polycrystalline Cd(Se,Te) thin-film solar cells with compositional gradient near the front junction

Spatially resolved photoluminescence analysis of Se passivation and defect formation in CdSe$_{x}$Te$_{1-x}$ thin films

Several Efficiency Influencing Factors in CdTe/CdS Solar Cells

Comprehensive Study of Carrier Recombination in High‐Efficiency CdTe Solar Cells Using Transient Photovoltage

Structural defects in MBE-grown CdTe-based heterojunctions for photovoltaic applications

Impact of ALD-Deposited Ultrathin Nitride Layers on Carrier Lifetimes and Photoluminescence Efficiency in CdTe/MgCdTe Double Heterostructures

Enhanced Performance of CdTe Solar Cells with Sb2Se3 Back Contacts

Near Infrared Absorption of CdSe(x)Te(1-x) Alloyed Quantum Dot Sensitized Solar Cells with More Than 6% Efficiency and High Stability.

Exploring In$_2$(Se$_{1-x}$Te$_x$)$_3$ alloys as photovoltaic materials

Rationally Controlled Synthesis of CdSe x Te 1-x Alloy Nanocrystals and Their Application in Efficient Graded Bandgap Solar Cells.

A microstructural study on the surface and interface of CdTe/CdS solar cells