Abstract:Thin film CdTe-based photovoltaic devices have achieved high efficiency above 22 %. The recent improvement in efficiency is due to Se alloying in the CdTe absorbers to form a CdSeTe/CdTe structure. The subsequent band gap grading increases the short circuit current density . The Se can be introduced by depositing a precursor thin film of either CdSe or a CdSeTe alloy and then diffusing the Se into the CdTe during the high temperature cadmium chloride activation process. Using CdSe is preferred because it is easier to control the Se concentration. However, during fabrication of the CdSeTe/CdTe devices, the CdSe thickness needs to be precisely controlled to prevent the retention of a CdSe remnant layer after the activation treatment. Retention of a remnant CdSe layer causes a dramatic reduction in device efficiency. In this work, we show that the reduction in efficiency is caused by a number of factors. The remnant CdSe layer is n-type which moves the position of the p-n junction. Also, it is widely thought that the CdSe remnants are photo-inactive. In this work, we clarify that the individual CdSe grains are actually highly photo-active. However, the grain sizes in the CdSe remnant and the adjacent CdSeTe layer are very small resulting in a high grain boundary area. Although the grain boundaries are passivated with chlorine, cathodoluminescence imaging and electrical measurements show that this is only partially effective. Also, EQE measurements show that the remnant CdSe causes parasitic absorption. Overall, the remnant CdSe layer causes a reduction in short circuit current density and device efficiency. The thickness of the CdSe precursor layer and the cadmium chloride activation process conditions must be precisely optimised to ensure that all the CdSe is consumed and inter-diffused to form the CdSeTe alloy for highest efficiency devices.

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Buried junction and efficient carrier separation in CdSexTe1−x/CdTe solar cells

Vertical phase segregation of hybrid poly(3-hexylthiophene) and fullerene derivative composites controlled via velocity of solvent drying

Study of Interdiffusion Reaction at the CdS/CdTe Interface

Determination of Band Alignment at the CdTe/SnTe Heterojunction Interface for CdTe Thin-Film Solar Cells

Strategy for Performance Enhancement of Cd1-XZnXTe/CdS Core/shell Quantum Dot Sensitized Solar Cells Through Band Adjustment

High-efficiency CdTe-based Thin-Film Solar Cells with Unltrathin CdS:O Window Layer and Processes with Post Annealing

The study on saturation current and ideality factor of CdTe solar cell based on CdS window layer deposited with hydrogen peroxide

A microstructural study on the surface and interface of CdTe/CdS solar cells

From Atomic Structure to Photovoltaic Properties in CdTe Solar Cells

Several Efficiency Influencing Factors in CdTe/CdS Solar Cells

Compositional Dependence of Structural and Electronic Properties of Cu2ZnSn(S,Se)4alloys for Thin Film Solar Cells

Rationally Controlled Synthesis of CdSe x Te 1-x Alloy Nanocrystals and Their Application in Efficient Graded Bandgap Solar Cells.

Cu-doped CdS and its application in CdTe thin film solar cell

20%-efficient polycrystalline Cd(Se,Te) thin-film solar cells with compositional gradient near the front junction

Radiative Efficiency and Charge‐Carrier Lifetimes and Diffusion Length in Polycrystalline CdSeTe Heterostructures

Enhancing CdTe Solar Cell Performance by Reducing the "Ideal" Bandgap of CdTe through CdTe1-xSex Alloying

The effect of remnant CdSe layers on the performance of CdSeTe/CdTe photovoltaic devices

Rationally Controlled Synthesis of CdSexTe1-x Alloy Nanocrystals and Their Application in Efficient Graded Bandgap Solar Cells

Interfacial Engineering by Applying Double CdS Structure Electron Transport Layer for High-Performance Sb2(S,Se)3 Solar Cells

Combinatorial Tuning of Work Function and Optical Properties in CuZnSe Thin Films for Efficient Bifacial CdTe Solar Cells