Abstract:Thin film CdTe-based photovoltaic devices have achieved high efficiency above 22 %. The recent improvement in efficiency is due to Se alloying in the CdTe absorbers to form a CdSeTe/CdTe structure. The subsequent band gap grading increases the short circuit current density . The Se can be introduced by depositing a precursor thin film of either CdSe or a CdSeTe alloy and then diffusing the Se into the CdTe during the high temperature cadmium chloride activation process. Using CdSe is preferred because it is easier to control the Se concentration. However, during fabrication of the CdSeTe/CdTe devices, the CdSe thickness needs to be precisely controlled to prevent the retention of a CdSe remnant layer after the activation treatment. Retention of a remnant CdSe layer causes a dramatic reduction in device efficiency. In this work, we show that the reduction in efficiency is caused by a number of factors. The remnant CdSe layer is n-type which moves the position of the p-n junction. Also, it is widely thought that the CdSe remnants are photo-inactive. In this work, we clarify that the individual CdSe grains are actually highly photo-active. However, the grain sizes in the CdSe remnant and the adjacent CdSeTe layer are very small resulting in a high grain boundary area. Although the grain boundaries are passivated with chlorine, cathodoluminescence imaging and electrical measurements show that this is only partially effective. Also, EQE measurements show that the remnant CdSe causes parasitic absorption. Overall, the remnant CdSe layer causes a reduction in short circuit current density and device efficiency. The thickness of the CdSe precursor layer and the cadmium chloride activation process conditions must be precisely optimised to ensure that all the CdSe is consumed and inter-diffused to form the CdSeTe alloy for highest efficiency devices.

Passivation mechanism in CdTe solar cells: The hybrid role of Se

Spatially resolved photoluminescence analysis of Se passivation and defect formation in CdSe$_{x}$Te$_{1-x}$ thin films

Buried junction and efficient carrier separation in CdSexTe1−x/CdTe solar cells

Spatially resolved photoluminescence analysis of the role of Se in CdSe x Te 1−x thin films

Back-surface electric field passivation of CdTe solar cells using sputter-deposited CdSe

The phase segregation in CdTe/CdS heterojunction and its effect on photo current of CdTe thin films solar cell

The effect of remnant CdSe layers on the performance of CdSeTe/CdTe photovoltaic devices

As‐Doped Polycrystalline CdSeTe: Localized Defects, Carrier Mobility and Lifetimes, and Impact on High‐Efficiency Solar Cells

Radiative Efficiency and Charge‐Carrier Lifetimes and Diffusion Length in Polycrystalline CdSeTe Heterostructures

The role of O2 in CdSeTe thin film deposition and CdSeTe/CdTe solar cell performance

Efficient defect passivation of Sb2Se3 film by tellurium doping for high performance solar cells

Mechanism of Defect Passivation in Sb2Se3 Solar Cells via Buried Selenium Seed Layer

Active Passivation of Anion Vacancies in Antimony Selenide Film for Efficient Solar Cells

Effect of Cd diffusion on the electrical properties of the Cu(In,Ga)Se2 thin-film solar cell

Enhanced Sb2Se3 Solar Cell Performance Through Theory-Guided Defect Control

Selenization of Sb2se3 Absorber Layer: an Efficient Step to Improve Device Performance of Cds/Sb2se3 Solar Cells

Defect-assisted Nonradiative Recombination in Cu2ZnSnSe4 : A Comparative Study with Cu2ZnSnS

Passivation of Deep‐Level Defects through Chemical Environment Regulation for Efficient CZTSSe Solar Cells Based on Active Selenium Adsorption–Desorption Process

Efficient defect passivation of Sb<sub>2</sub>Se<sub>3</sub> film by tellurium doping for high performance solar cells

Improved Carrier Lifetimes of CdSe Thin Film via Te Doping for Photovoltaic Application

Enhanced Performance of CdTe Solar Cells with Sb2Se3 Back Contacts