Designing Atomic Interface in Sb2S3/CdS Heterojunction for Efficient Solar Water Splitting
Minji Yang,Zeyu Fan,Jinyan Du,Chao Feng,Ronghua Li,Beibei Zhang,Nadiia Pastukhova,Matjaz Valant,Matjaž Finšgar,Andraž Mavrič,Yanbo Li
DOI: https://doi.org/10.1002/smll.202311644
IF: 13.3
2024-03-10
Small
Abstract:An atomic layer deposited Al2O3 interlayer is employed to prevent the diffusion of Cd2+ cations and lower the interface defect density of Sb2S3/CdS heterojunction, resulting in a record half‐cell solar‐to‐hydrogen conversion efficiency of 2.78% for the Ag:Sb2S3/Al2O3/CdS/Pt photocathode. In the emerging Sb2S3‐based solar energy conversion devices, a CdS buffer layer prepared by chemical bath deposition is commonly used to improve the separation of photogenerated electron‐hole pairs. However, the cation diffusion at the Sb2S3/CdS interface induces detrimental defects but is often overlooked. Designing a stable interface in the Sb2S3/CdS heterojunction is essential to achieve high solar energy conversion efficiency. As a proof of concept, this study reports that the modification of the Sb2S3/CdS heterojunction with an ultrathin Al2O3 interlayer effectively suppresses the interfacial defects by preventing the diffusion of Cd2+ cations into the Sb2S3 layer. As a result, a water‐splitting photocathode based on Ag:Sb2S3/Al2O3/CdS heterojunction achieves a significantly improved half‐cell solar‐to‐hydrogen efficiency of 2.78% in a neutral electrolyte, as compared to 1.66% for the control Ag:Sb2S3/CdS device. This work demonstrates the importance of designing atomic interfaces and may provide a guideline for the fabrication of high‐performance stibnite‐type semiconductor‐based solar energy conversion devices.
materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology