Using Guesswork as a Measure for Confidentiality of Selectively Encrypted Messages

R. Lundin,S. Lindskog,A. Brunström,S. Fischer-Hübner

DOI: https://doi.org/10.1007/978-0-387-36584-8_14

Abstract:

What problem does this paper attempt to address?

CdTe thin film solar cells with a SnTe buffer layer in back contact

Zeping Weng,Songsong Ma,He Zhu,Zhenyu Ye,Tianyu Shu,Jie Zhou,Xuanzhi Wu,Huizhen Wu

DOI: https://doi.org/10.1016/j.solmat.2017.12.018

IF: 6.9

2018-01-01

Solar Energy Materials and Solar Cells

Abstract:In recent years CdTe thin film solar cells (SCs) have demonstrated promising market application foreground. However, a relatively large gap between the achieved SCs efficiencies and the theoretically predicted maximum efficiency still exists. In particular, the open circuit voltage (Voc) of the CdTe thin film SCs could be further increased, which is limited by high-work-function of CdTe. In this work, p-type narrow-gap SnTe thin films are proposed as a buffer layer in the back contact of CdTe SCs. The band alignment at SnTe/CdTe interface renders a small valance band offset, which expedites hole transport from the CdTe absorber to the hole electrode and improves the Ohmic contact for CdTe. With the insertion of a SnTe single buffer layer at the back contact, a Cu-free CdTe SC has been developed, which displays the same cell efficiency as the traditional cells using CuxTe as the back contact. The Voc of cells with ZnTe: Cu/SnTe double-layer at back contact is notably higher than the CdTe SCs fabricated with CuxTe or ZnTe: Cu single-layer at the back contact. Furthermore, accretion of hole concentration is also demonstrated by the diffusion of Sn in the CdTe absorber layer. This work shows the potential to improve CdTe SCs by using a narrow-gap IV-VI compound semiconductor.
High-efficiency CdTe-based Thin-Film Solar Cells with Unltrathin CdS:O Window Layer and Processes with Post Annealing

Anhong Hu,Jie Zhou,Penggeng Zhong,Xinyuan Qin,Mengfei Zhang,Yuxia Jiang,Xuanzhi Wu,Deren Yang

DOI: https://doi.org/10.1016/j.solener.2020.12.008

IF: 7.188

2021-01-01

Solar Energy

Abstract:The thickness of the CdS:O window layer plays an important role in CdTe-based thin-film solar cell performance. Normally with thinner CdS:O layer, the cells' short wavelength response can be enhanced to achieve higher short-circuit current density (J(sc)), while the open-circuit voltage (V-oc) and fill factor (FF) would degrade. Previous research finds that reducing the CdS:O layer thickness to less than 40 nm would decrease the cells' efficiency (Eff.). In this work, 18% efficiency CdTe thin-film solar cell with only 30 nm CdS:O window layer is demonstrated. A post annealing process is developed to fabricate high efficiency cells with ultrathin CdS:O layers. Our results indicate that the high defect density in CdTe absorber, low built-in potential (V-bi) and high back contact barrier (Phi(b)) are partially responsible for the reduced V-oc and FF of cells with ultrathin CdS:O layers. The post annealing process can increase the carrier concentration (N-cv ) and V-bb and decrease the Phi(b), in which way improves V-oc and FF for higher cell efficiency.
Gradient bandgap enables >13% efficiency sulfide Kesterite solar cells with open-circuit voltage over 800 mV

Kang Yin,Jinlin Wang,Licheng Lou,Xiao Xu,Bowen Zhang,Menghan Jiao,Jiangjian Shi,Dongmei Li,Huijue Wu,Yanhong Luo,Qingbo Meng

2024-03-30

Abstract:Sulfide Kesterite Cu2ZnSnS4 (CZTS), a nontoxic and low-cost photovoltaic material, has always being facing severe charge recombination and poor carrier transport, resulting in the cell efficiency record stagnating around 11% for years. Gradient bandgap is a promising approach to relieve these issues, however, has not been effectively realized in Kesterite solar cells due to the challenges in controlling the gradient distribution of alloying elements at high temperatures. Herein, targeting at the Cd alloyed CZTS, we propose a pre-crystallization strategy to reduce the intense vertical mass transport and Cd rapid diffusion in the film growth process, thereby realizing front Cd-gradient CZTS absorber. The Cd-gradient CZTS absorber, exhibiting downward bending conduction band structure, has significantly enhanced the minority carrier transport and additionally improved band alignment and interface property of CZTS/CdS heterojunction. Ultimately, we have achieved a champion total-area efficiency of 13.5% (active-area efficiency: 14.1%) in the cell and in particular a high open-circuit voltage of >800 mV. We have also achieved a certified total-area cell efficiency of 13.16%, realizing a substantial step forward for the pure sulfide Kesterite solar cell.

Materials Science,Applied Physics
Towards highly efficient thin-film solar cells with a graded-bandgap CZTSSe layer

Faiz Ahmad,Akhlesh Lakhtakia,Tom H. Anderson,Peter B. Monk

DOI: https://doi.org/10.1088/2515-7655/ab6f4a

2020-04-06

Abstract:A coupled optoelectronic model was implemented along with the differential evolution algorithm to assess the efficacy of grading the bandgap of the CZTSSe layer for enhancing the power conversion efficiency of thin-film CZTSSe solar cells. Both linearly and sinusoidally graded bandgaps were examined, with the molybdenum backreflector in the solar cell being either planar or periodically corrugated. Whereas an optimally graded bandgap can dramatically enhance the efficiency, the effect of periodically corrugating the backreflector is modest at best. An efficiency of 21.74% is predicted with sinusoidal grading of a 870-nm-thick CZTSSe layer, in comparison to 12.6% efficiency achieved experimentally with a 2200-nm-thick homogeneous CZTSSe layer. High electron-hole-pair generation rates in the narrow-bandgap regions and a high open-circuit voltage due to a wider bandgap close to the front and rear faces of the CZTSSe layer are responsible for the high enhancement of efficiency.

Applied Physics
Buried junction and efficient carrier separation in CdSexTe1−x/CdTe solar cells

Hongxu Jiang,Yanbo Cai,Guangwei Wang,Kai Yi,Fei Liu,Juan Tian,Kai Shen,Deliang Wang

DOI: https://doi.org/10.1063/5.0188812

IF: 2.877

2024-04-09

Journal of Applied Physics

Abstract:Alloying CdTe absorbers with Se is a critical advancement for the fabrication of highly efficient CdTe thin-film solar cells. Herein, the role of the Se concentration gradient in CdSexTe1−x/CdTe solar cells is stressed in addition to the decreased bandgap and passivation effect of Se. The buried graded CdSexTe1−x at the front interface of the device was stripped and analyzed by quasi in situ x-ray photoelectron spectroscopy depth profiling. A serial shift of Fermi level toward the valence band was probed as the Se concentration decreased in the graded CdSexTe1−x absorber, revealing the presence of n-type CdSexTe1−x region near the front contact. Kelvin probe force microscopy characterizations and voltage-dependent photocurrent collection analysis further confirmed the existence of a buried junction in the graded CdSexTe1−x absorber. The CdS-free CdTe solar cell with a graded CdSexTe1−x/CdTe absorber fabricated in this study showed an efficiency of 17.6%. These results indicated that the non-uniform distribution of Se introduced a built-in field in the graded CdSexTe1−x absorber and enabled efficient separation of photogenerated carriers, yielding high-performance CdTe solar cells in the absence of a conventional n-type CdS window layer. This study deepened the understanding of the performance enhancement in Se-containing CdTe solar cells and provided new ideas for further performance optimization.

physics, applied
Strategy for Performance Enhancement of Cd1-XZnXTe/CdS Core/shell Quantum Dot Sensitized Solar Cells Through Band Adjustment

Wangwei Lu,Bin Song,Huazheng Li,Jing Zhou,Weixia Dong,Gaoling Zhao,Gaorong Han

DOI: https://doi.org/10.1016/j.jallcom.2020.154050

IF: 6.2

2020-01-01

Journal of Alloys and Compounds

Abstract:Novel type-II core/shell structure quantum dos have been synthesized for solar cell photoelectrode material. Cd0.64Zn0.36Te and CdS were chosen as a core and shell, respectively, to generate type-II core/shell structure quantum dos (QDs). Density functional theory was employed to explore the energy structure of Cd1-xZnxTe/CdS core/shell QDs, revealing that introduction of Zn element is a feasible strategy to prepare CdTe/CdS based QDs with type-II core/shell structure. Then, Cd0.64Zn0.36Te/CdS core/shell QDs were synthesized by aqueous phase method. Microscopic measurements showed that Cd0.64Zn0.36Te/CdS core/shell QDs have high crystalline quality. Ultraviolet photoelectron spectroscopy together with optical spectra indicated an upward shift of the Cd0.64Zn0.36Te conduction band edge compared with CdTe, as also evidenced by systematic density functional theory based first principle calculation. Photoluminescence decay measurement also indicated the enhanced electron injection rate and decreased charge recombination of Cd0.64Zn0.36Te/CdS QD sensitized TiO2 films. In addition, by optimizing the deposition cycles of the CdS shell, the power conversion efficiency of Cd0.64Zn0.36Te/CdS QDs sensitized solar cells was enhanced.
Improved Open‐Circuit Voltage of Sb 2 Se 3 Thin‐Film Solar Cells Via Interfacial Sulfur Diffusion‐Induced Gradient Bandgap Engineering

Shuo Chen,Muhammad Ishaq,Wei Xiong,Usman Ali Shah,Umar Farooq,Jingting Luo,Zhuanghao Zheng,Zhenghua Su,Ping Fan,Xianghua Zhang,Guangxing Liang

DOI: https://doi.org/10.1002/solr.202100419

IF: 9.1726

2021-08-20

Solar RRL

Abstract:The performance of thermally deposited Sb2Se3 solar cells are severely limited by various bulk and interfacial recombination, instigating large open-circuit voltage (VOC) deficit. Ternary Sb2(S,Se)3 is considered as a remedy, however, it is also subjected to a dilemma that improvement in VOC will be escorted by JSC loss due to the shrinkage of light harvest. Thus, a gradient of S/Se across the film is prerequisite to avoid this detrimental compromise. Herein, we explored the incorporation of S in Sb2Se3 absorber layer evaporated from CdS buffer layer during vapor transport deposition (VTD) process, and its further self-activated diffusion at interface upon ambient storage. For the gradient ITO/CdS/Sb2(S,Se)3/Sb2Se3/Au solar cell, the large bandgap Sb2(S,Se)3 at heterojunction side contributes to high VOC, while the narrow bandgap Sb2Se3 at top side confirms high JSC. Sulfur diffusion at CdS/Sb2Se3 interface also improves the junction quality with an enlarged Vbi, reduced interfacial defects and recombination loss, thus improving VOC from 393 to 430 mV. Such VOC represents the highest value for that of thermally deposited Sb2Se3 solar cells. The champion device also delivers an interesting efficiency of 7.49%. This research provides substantial guidance in exploring efficient approaches to improve the performance of Sb2Se3 solar cells.This article is protected by copyright. All rights reserved.

energy & fuels,materials science, multidisciplinary
Composition variations in Cu(In,Ga)(S,Se)2 solar cells: not a gradient, but an interlaced network of two phases

Aubin JC. M. Prot,Michele Melchiorre,Felix Dingwell,Anastasia Zelenina,Hossam Elanzeery,Alberto Lomuscio,Thomas Dalibor,Maxim Guc,Robert Fonoll-Rubio,Victor Izquierdo-Roca,Gunnar Kusch,Rachel A. Oliver,Susanne Siebentritt

2023-07-05

Abstract:Record efficiency in chalcopyrite-based solar cells Cu(In,Ga)(S,Se)2 is achieved using a gallium gradient to increase the band gap of the absorber towards the back side. Although this structure has successfully reduced recombination at the back contact, we demonstrate that in industrial absorbers grown in the pilot line of Avancis, the back part is a source of non-radiative recombination. Depth-resolved photoluminescence (PL) measurements reveal two main radiative recombination paths at 1.04 eV and 1.5-1.6 eV, attributed to two phases of low and high band gap material, respectively. Instead of a continuous change in the band gap throughout the thickness of the absorber, we propose a model where discrete band gap phases interlace, creating an apparent gradient. Cathodoluminescence and Raman scattering spectroscopy confirm this result. Additionally, deep defects associated to the high gap phase reduce the absorber performance. Etching away the back part of the absorber leads to an increase of one order of magnitude in the PL intensity, i.e., 60 meV in quasi Fermi level splitting. Non-radiative voltage losses correlate linearly with the relative contribution of the high energy PL peak, suggesting that reducing the high gap phase could increase the open circuit voltage by up to 180 mV.

Materials Science
Gradient bandgap modification for highly efficient carrier transport in antimony sulfide-selenide tandem solar cells

Yu Cao,Chaoying Liu,Tinghe Yang,Yao Zhao,Yanling Na,Chongxv Jiang,Jing Zhou,Jinbo Pang,Hong Liu,Mark H. Rummeli,Weijia Zhou,Gianaurelio Cuniberti

DOI: https://doi.org/10.1016/j.solmat.2022.111926

IF: 6.9

2022-10-01

Solar Energy Materials and Solar Cells

Abstract:Antimony chalcogenides emerge as a type of efficient material for solar cells. In particular, antimony sulfide-selenide (SbSSe) has attracted significant interests based on their simple preparation, excellent photoelectric performance, and tunable bandgaps. In this study, by applying energy-band engineering technologies, we achieved carrier transport balance and light absorption balance for SbSSe single- and triple-junction solar cells, respectively. First in a single junction solar cell, the photoelectric conversion efficiency (PCE) of SbSSe solar cells is improved from 13.14% to 16.16% with a front-gradient Se content structure compared to a non-gradient Se content SbSSe solar cell. This improvement is attributed to the additional electric field induced by such a gradient bandgap, promoting the carrier motion. Consequently, the balance of carrier transport is realized by adjusting the drift velocities of holes and electrons simultaneously, thereby surpassing carrier recombination and improving the device parameters of short-circuit current density (Jsc) and fill factor (FF). In a next step, an SbSSe of advanced gradient bandgap has been applied as the absorber layer of middle-cell in an antimony chalcogenide based triple-junction solar cell. Based on the high Jsc and FF advantages of SbSSe sub-cells with front-gradient Se content structure, the uniform absorption of sunlight in each sub-cell and current matching of tandem solar cells could be easily realized. Eventually, the PCE of the triple-junction solar cell exhibits an enhancement from 17.34% to 19.51%. Our results demonstrate that the application of energy-band engineering technology can effectively improve device performance, providing theoretical guidance for the refined design and nanomanufacturing development of antimony chalcogenide solar cells.

materials science, multidisciplinary,physics, applied,energy & fuels
Improving CdTe‐Based Thin‐Film Solar Cell Efficiency with the Oxygenated CdSe Layer Prepared by Sputtering Process

Anhong Hu,Jie Zhou,Xinyuan Qin,Yuxia Jiang,Peng Zhou,Penggeng Zhong,Shunwei Tang,Xuanzhi Wu,Deren Yang

DOI: https://doi.org/10.1002/pssa.202000560

2020-01-01

Abstract:Sputtered CdSe window layer can improve the short‐circuit current density (Jsc) of CdTe‐based thin‐film solar cell, however, meanwhile degrade the open‐circuit voltage (Voc) and fill factor (FF). Herein, an oxygenation process is introduced during CdSe sputtering to improve this window layer's property for better device performance. The influence of oxygen on the CdSe is similar as the effect of oxygen on CdS. Incorporation of oxygen into the CdSe film promotes the formation of CdSeO3 phase. Both Voc and FF of the CdTe solar cells are improved due to the formation of CdSeO3, and high efficiency (Eff.) of 18.6% is achieved. Efficiency improvement at module level is also demonstrated after applying the CdSe:O process in production line. This progress contributes to the CdTe‐based thin‐film module production for further efficiency improvement and cost reduction.
The phase segregation in CdTe/CdS heterojunction and its effect on photo current of CdTe thin films solar cell

Bin Lv,Ligang Ma,Yun Li,Bo Yan,Pinggen Cai,Xiaoshan Wu

DOI: https://doi.org/10.1016/j.solener.2016.07.030

IF: 7.188

2016-01-01

Solar Energy

Abstract:•The phase segregation of CdTeySx alloy is confirmed by XRD measurement.•The phase segregation of CdTeySx alloy is considered in the SE analysis.•The EQE is simulated with the optical constants from phase segregation model.•The positive and negative effects of S-Te inter diffusion are showed.•The efficiency of solar cell can be promoted by suppressing the current leakage.
Performance of State-of-the-Art CdTe-Based Solar Cells: What Has Changed?

Ishwor Khatri,Camden Kasik,James R. Sites

DOI: https://doi.org/10.1109/jphotov.2024.3422651

2024-08-25

IEEE Journal of Photovoltaics

Abstract:The open-circuit voltage (VOC) of polycrystalline state-of-the-art, arsenic-doped CdSeTe/CdTe solar cells has reached 917 mV, and the record cell efficiency has been gradually increasing. However, there is a significant difference in performance between the current CdTe-based solar cells and single-crystal GaAs cells that have a comparable band gap. The largest contribution to this difference in performance is the voltage. Between 1993 and 2023, VOC of CdTe-based solar cells improved by ∼143 mV when an appropriate adjustment was made for the band gap. This value is still about ∼180 mV below the best GaAs cells. The potential for even higher CdTe efficiencies will likely require a combination of incorporation of front-contact improvements, optimization of thickness, selenium profile, doping, and grain-boundary passivation of the absorber, better passivation of the rear interface, and assurance of back-contact conductivity and band alignment.

energy & fuels,materials science, multidisciplinary,physics, applied
Highly efficient CIGS solar cells based on a new CIGS bandgap gradient design characterized by numerical simulation

Wu Liu,Haotian Li,Bo Qiao,Suling Zhao,Zheng Xu,Dandan Song

DOI: https://doi.org/10.1016/j.solener.2022.01.054

IF: 7.188

2022-02-01

Solar Energy

Abstract:Optimization of Cu(In,Ga)Se2 (CIGS) bandgap gradient by modifying Ga gradient is an important approach to get highly efficient CIGS solar cells. In this work, we propose a new type of CIGS bandgap gradient, tetra-gradient or W-shaped gradient bandgap (TGB), and compare it with other three existed types, including flat bandgap (FB), single gradient bandgap (SGB) and double gradient/V-shaped bandgap (DGB). In TGB of CIGS layer, the bandgap distribution contains two bandgap minima from the front surface to the back side, and the bandgap gradient distribution presents a 'W' shape. The device performance was characterized through wxAMPS software. It is found that two narrowed bandgap regions of the TGB increase the absorption probability of photons at long wavelengths, thereby improving the short circuit current of CIGS devices. In addition, TGB can effectively increase the open circuit voltage and the resultant photoelectric conversion efficiency of CIGS solar cells. The maximum efficiency of the CIGS solar cells based on FB, SGB, DGB and TGB are simulated to be 20.49%, 22.91%, 23.00% and 23.35%, respectively. The new bandgap gradient proposed in this work can be achieved experimentally by adjusting Ga gradient. This work reveals that further optimization of the bandgap gradient of CIGS layer is possible to achieve a further breakthrough in the efficiency of CIGS solar cells.

energy & fuels
Achieving 21.4% Efficient CdSeTe/CdTe Solar Cells Using Highly Resistive Intrinsic ZnO Buffer Layers

Luksa Kujovic,Xiaolei Liu,Ali Abbas,Luke O. Jones,Adam M. Law,Mustafa Togay,Kieran M. Curson,Kurt L. Barth,Jake W. Bowers,John M. Walls,Ochai Oklobia,Dan A. Lamb,Stuart J. C. Irvine,Wei Zhang,Chungho Lee,Timothy Nagle,Dingyuan Lu,Gang Xiong

DOI: https://doi.org/10.1002/adfm.202312528

IF: 19

2023-12-24

Advanced Functional Materials

Abstract:The incorporation of a ZnO buffer layer in the CdSeTe device structure has led to conversion efficiencies exceeding 21%. The ZnO carrier concentration is orders of magnitude lower than that of the conventional SnO2 buffer. ZnO creates a high‐quality interface with CdSeTe, resulting in the unusual omission of Cl at the front interface. In this study, the use of intrinsic and highly insulating ZnO buffer layers to achieve high conversion efficiencies in CdSeTe/CdTe solar cells is reported. The buffer layers are deposited on commercial SnO2:F coated soda‐lime glass substrates and then fabricated into arsenic‐doped CdSeTe/CdTe devices using an absorber and back contact deposited by First Solar. The ZnO thickness is varied from 30 to 200 nm. The devices incorporating a 50 nm ZnO buffer layer achieved an efficiency of 21.23% without an anti‐reflection coating. An improved efficiency of 21.44% is obtained on a substrate with a multilayer anti‐reflection coating deposited prior to device fabrication. The highly efficient ZnO based devices are stable and do not develop anomalous J‐V behavior following environmental tests. High resolution microstructural analysis reveals the formation of a high‐quality ZnO/CdSeTe interface. Unusually, chlorine is not detected as a discrete layer at the interface, these observations point to a high‐quality interface. The extrapolation of Voc to 0 K indicates that interface recombination dominates, suggesting that further improvement is possible. Using device modeling, an attempt is made to understand how this type of device performs so well.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Elucidating the Potential Strategies for Performance Improvement of CBTSSe‐Based Solar Cells: A Pathway Toward 20% Efficiency

Hitarth N. Patel,Rajesh K. Sharma,Deepak Joshi,Vivek Garg

DOI: https://doi.org/10.1002/ente.202301198

IF: 4.149

2024-01-12

Energy Technology

Abstract:The earth‐abundant multinary chalcogenide, Cu2BaSn(S,Se)4, is an emerging choice as an absorber for photovoltaic applications. This research article presents a systematic approach to optimize the various layers of the cell. By appropriate substitution of the buffer layer and the back metal contact, a proposed device achieves an efficiency of 20.70%. Cu2BaSnS4−xSex (CBTSSe) has recently attracted substantial attention as an emerging chalcogenide material due to its abundant constituent elements and reduced antisite disorders compared to the Cu2ZnSn(S,Se)4 (CZTSSe). In this work, recently reported Mo/CBTSSe/Cd:ZnS Zn1−xCdxS/i‐Mg:ZnO (ZMO)/Al:ZnO (AZO) cell structure with the power conversion efficiency (PCE) of 6.17% is used to develop the baseline model. Afterwards, device performance parameters are fine‐tuned by investigating the effect of (a) absorber thickness and defect density, (b) absorber/buffer conduction band offset, (c) absorber/buffer interface defect density, (d) anti‐reflection coating at the front layer, and (e) back contact optimization. The device with the optimized parameter values of absorber thickness: 1.2 μm, absorber defect density: 1015 cm−3, and alternate buffer layer of WS2, interface defect density:1010 cm−2, resulting in the PCE of 12.94%. Introducing an anti‐reflective coating (ARC) at the front contact further improves the PCE to 17.87%. Finally, introducing Ni as a back contact instead of Mo enhances the PCE to 20.70%. These results provide insight into possible techniques to improve the performance of CBTSSe‐based solar cells.

energy & fuels
Synergy of Front‐Surface Energy‐Level Gradient and Lattice Anchoring Effect for Enhancing Perovskite Solar Cell Performance

Mingxuan Guo,Huimin Pang,Xingtong Chen,Peng Wan,Xueqing Xia,Song Chen

DOI: https://doi.org/10.1002/smll.202307498

IF: 13.3

2023-12-09

Small

Abstract:Constructing a front surface gradient, which increases minority carrier lifetime without defect passivation, is challenging for two‐step processed perovskite solar cells. A front surface layer assembled of ZnCdSeS‐based quantum dots enables a 73 mV gain in open‐circuit voltage and a power conversion efficiency of 24.37% by forming a valance band gradient and minimizing the lattice mismatch with the absorber. A front surface gradient of the absorber valence band can effectively reduce the open‐circuit voltage (VOC) loss of perovskite solar cells by suppressing the minority carrier concentration near the front surface. However, the existing method is limited to the one‐step fabrication process, resulting in underachieved photon harvesting and power conversion efficiency (PCE). To solve the problem, ZnCd‐based alloy quantum dots (QDs) are utilized to create a valence‐band‐maximum gradient at the front surface of a two‐step processed FAPbI3 absorber. This design significantly enhances VOC without requiring surface passivation. Furthermore, it is demonstrated that reducing the QD‐perovskite lattice mismatch while maintaining QD's energy levels mitigates nonradiative recombination without compromising the front surface gradient effect. As a result, normal‐structured perovskite solar cells achieve a VOC equivalent to 93% of the Schockley–Queisser limit and a PCE of 24.37%.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Preparing Cu2ZnSn(SxSe1−x)4 thin-film solar cells with front band gap grading by plasma sulfurization

Daoyong Zhang,Shizhong Sun,Xinyu Li,Xiang Li,Xin Liu,Qiulian Li,Hua Liao,Shurong Wang

DOI: https://doi.org/10.1016/j.solener.2021.08.073

IF: 7.188

2021-10-01

Solar Energy

Abstract:In this paper, Cu2ZnSn(S x Se1− x )4(CZTSSe) thin-films with a front-graded band gap were prepared by plasma sulfurization. The method of selenization followed by low-temperature plasma sulfurization was adopted to effectively control the uneven diffusion of S in the absorption layer. By investigating and analyzing the grazing incidence X-ray diffraction, Raman spectroscopy, and PL spectra, the CZTSSe absorption layer with an S-rich top and S-poor bottom layer could be obtained by plasma sulfurization. The inhomogeneous distribution of S led to the formation of band gap gradients. Based on that, the band gap near the top of the absorption layer was determined to be 1.13 eV and the bottom band gap was 1.03 eV. Approximately 300 nm thick sulfur-rich CZTSSe films were found near the surface favoring an increase in the band gap at the interface, which could be attributed to a high open circuit voltage (Voc). The establishment of the band gap gradient formed a barrier towards the motion of holes towards the interface and increased the effective interfacial recombination band gap, both of which significantly reduced the interfacial recombination. Finally, the CZTSSe thin-film solar cells with a band gap gradient were prepared by plasma sulfurization exhibited a power conversion efficiency (PCE) of 8.11%. Compared with CZTSSe thin-film solar cells without post plasma sulfurization, which had a PCE of 6.98%, the Voc of the CZTSSe solar cell improved considerably from 471.37 mV to 513.93 mV; however, it had little effect on short-circuit current density (Jsc).

energy & fuels
Impact of graded CIGS absorber layer on Cd-free CIGS thin-film solar cell performance: Numerical optimization

Mohamed LAHOUAL,Mohammed BOURENNANE,Lakhdar Aidaoui,Toufik Tibermacine

DOI: https://doi.org/10.1088/2040-8986/ad8c57

IF: 2.1

2024-10-30

Journal of Optics

Abstract:This paper investigates replacing the CdS buffer layer with (Zn, Mg)O and Zn(S, O) double buffer layers. To increase the efficiency of the structure, our strategy involves numerically studying and comparing three types of CIGS bandgap absorber layers: FB (Flat Band), Double Gradient Bandgap (DG) with a high bandgap near the Mo contact (back side), a low bandgap near the buffer layer (front side), and a minimum bandgap between them, and Simple Gradient Bandgap (SG) with a high bandgap near the Mo contact (back side) and a low bandgap near the buffer layer (front side). Each type features different linear graded profiles in the thickness direction to determine the optimal bandgap gradient of the CIGS layer. The performance of the three types is numerically analyzed using the SCAPS-1D simulator. Simulation enables us to test multiple structural combinations efficiently, saving both time and money, while providing results that guide experimental research. The proposed device structure is composed of the following layers: ZnO:Al/n-Zn1-xMgxO/n- ZnSxO1-x/p- Graded-CuIn1-xGaxSe2 /Mo. To study the effects of linear bandgap gradient distribution of Ga⁄((Ga+In) ) ratio according to the thickness direction on CIGS solar cell performance, the electrical properties of the proposed CIGS model were initially matched with experimental data to confirm the structure's accuracy. It was found that the Double Gradient Bandgap (DG), with maxima of 1.44 eV at the back side (near Mo contact), 1.238 eV at the front side (near n-type buffer layer interface), and a minimum of 1.154 eV at a position of 1.7 μm from the back side, has a higher efficiency than the other structures with 26.22% (Voc = 0.8134 V, Jsc = 37.82 mA/cm2, FF = 85.21%). Optimizing the bandgap gradient of the CIGS absorber layer helps improve the efficiency of CIGS solar cells.

optics
Enhancing CdTe Solar Cell Performance by Reducing the "Ideal" Bandgap of CdTe through CdTe1-xSex Alloying

Jingxiu Yang,Su-Huai Wei

DOI: https://doi.org/10.1088/1674-1056/28/8/086106

2019-02-15

Abstract:CdTe is one of the leading materials for low cost, high efficiency thin-film solar cells, because it has a high absorption coefficient and a nearly ideal band gap of 1.48 eV for solar cell according to the Shockley-Queisser limit. However, its solar to electricity power conversion efficiency (PCE) is hindered by the relatively low open circuit voltage (VOC) due to intrinsic defect related issues. Here, we propose the strategy of improving CdTe solar cell performance byr reducing the "ideal" band gap of CdTe to gain more short-circuit current from long-wavelength absorption without sacrificing much VOC. Alloying CdTe with CdSe seems to be the most appropriate approach to reduce the band gap because of the large optical bowing and relatively small lattice mismatch in this system, even though CdSe has larger band gap than CdTe. Using the first principle hybrid functional calculation, we find that the minimum band gap of the CdTe1-xSex alloy can be reduced from 1.48 eV at x=0 to 1.39 eV at x=0.32. We also show that the formation of the alloy can improve the defect property, for example, p-type doping of CdTe by CuCd can be greatly enhanced by the alloying effects.

Materials Science
CdS(In)/CZTSSe bandgap alignment engineering for performance enhancement of solar cells without ZnO layer

Jingyuan Guo,Lei Wang,Letu SiQin,Chenjun Yang,Yutian Wang,Yiming Wang,Shuyu Li,Ruijian Liu,Chengjun Zhu,Hongmei Luan

DOI: https://doi.org/10.1016/j.solmat.2024.112787

IF: 6.9

2024-03-05

Solar Energy Materials and Solar Cells

Abstract:Compared with the traditional structure, the new Cu 2 ZnSn(S, Se) 4 (CZTSSe) solar cell without ZnO window layer has a larger short-circuit current reduction. Due to the poor band matching, serious interface recombination exists at the CZTSSe/CdS heterojunction interface. We have designed a strategy for the preparation of CdS(In) buffer layers by In ion doping to increase the depletion layer width, enhance the carrier concentration in the CdS(In) buffer layer, and improve the energy band alignment problem at the interface of the CZTSSe/CdS heterojunction, which in turn reduces the J SC loss caused by the removal of the ZnO layer. The energy band alignment of the CZTSSe/CdS heterojunction was modulated by finely controlling the doping amount of In ions, which decreased the conduction band offset (CBO) from 0.32 eV to 0.28 eV. Good band alignment is more conducive to carrier separation and transport, and reducing the nonradiative charge recombination at the CZTSSe/CdS heterojunction interface can effectively improve the J SC . Based on the contribution of device electrical parameters to photoelectric conversion efficiency (PCE), the contributions of J SC , open-circuit voltage, and fill factor were calculated to be 107.56%, -6.89%, and -0.67%, respectively, which indicates that the method significantly improves short-circuit currents and reduces the loss of J SC due to the absence of ZnO layer. This study provides a method to achieve high-efficiency CZTSSe solar cells by optimizing the energy band matching of CZTSSe/CdS heterojunctions from 7.07% PCE in conventional cells to 9.01% PCE in novel cells.

materials science, multidisciplinary,physics, applied,energy & fuels

Using Guesswork as a Measure for Confidentiality of Selectively Encrypted Messages

CdTe thin film solar cells with a SnTe buffer layer in back contact

High-efficiency CdTe-based Thin-Film Solar Cells with Unltrathin CdS:O Window Layer and Processes with Post Annealing

Gradient bandgap enables >13% efficiency sulfide Kesterite solar cells with open-circuit voltage over 800 mV

Towards highly efficient thin-film solar cells with a graded-bandgap CZTSSe layer

Buried junction and efficient carrier separation in CdSexTe1−x/CdTe solar cells

Strategy for Performance Enhancement of Cd1-XZnXTe/CdS Core/shell Quantum Dot Sensitized Solar Cells Through Band Adjustment

Improved Open‐Circuit Voltage of Sb 2 Se 3 Thin‐Film Solar Cells Via Interfacial Sulfur Diffusion‐Induced Gradient Bandgap Engineering

Composition variations in Cu(In,Ga)(S,Se)2 solar cells: not a gradient, but an interlaced network of two phases

Gradient bandgap modification for highly efficient carrier transport in antimony sulfide-selenide tandem solar cells

Improving CdTe‐Based Thin‐Film Solar Cell Efficiency with the Oxygenated CdSe Layer Prepared by Sputtering Process

The phase segregation in CdTe/CdS heterojunction and its effect on photo current of CdTe thin films solar cell

Performance of State-of-the-Art CdTe-Based Solar Cells: What Has Changed?

Highly efficient CIGS solar cells based on a new CIGS bandgap gradient design characterized by numerical simulation

Achieving 21.4% Efficient CdSeTe/CdTe Solar Cells Using Highly Resistive Intrinsic ZnO Buffer Layers

Elucidating the Potential Strategies for Performance Improvement of CBTSSe‐Based Solar Cells: A Pathway Toward 20% Efficiency

Synergy of Front‐Surface Energy‐Level Gradient and Lattice Anchoring Effect for Enhancing Perovskite Solar Cell Performance

Preparing Cu2ZnSn(SxSe1−x)4 thin-film solar cells with front band gap grading by plasma sulfurization

Impact of graded CIGS absorber layer on Cd-free CIGS thin-film solar cell performance: Numerical optimization

Enhancing CdTe Solar Cell Performance by Reducing the "Ideal" Bandgap of CdTe through CdTe1-xSex Alloying

CdS(In)/CZTSSe bandgap alignment engineering for performance enhancement of solar cells without ZnO layer