Towards highly efficient thin-film solar cells with a graded-bandgap CZTSSe layer

Faiz Ahmad,Akhlesh Lakhtakia,Tom H. Anderson,Peter B. Monk

DOI: https://doi.org/10.1088/2515-7655/ab6f4a

2020-04-06

Abstract:A coupled optoelectronic model was implemented along with the differential evolution algorithm to assess the efficacy of grading the bandgap of the CZTSSe layer for enhancing the power conversion efficiency of thin-film CZTSSe solar cells. Both linearly and sinusoidally graded bandgaps were examined, with the molybdenum backreflector in the solar cell being either planar or periodically corrugated. Whereas an optimally graded bandgap can dramatically enhance the efficiency, the effect of periodically corrugating the backreflector is modest at best. An efficiency of 21.74% is predicted with sinusoidal grading of a 870-nm-thick CZTSSe layer, in comparison to 12.6% efficiency achieved experimentally with a 2200-nm-thick homogeneous CZTSSe layer. High electron-hole-pair generation rates in the narrow-bandgap regions and a high open-circuit voltage due to a wider bandgap close to the front and rear faces of the CZTSSe layer are responsible for the high enhancement of efficiency.

Applied Physics

What problem does this paper attempt to address?

The main problem that this paper attempts to solve is to improve the photoelectric conversion efficiency of thin - film solar cells based on Cu₂ZnSn(SₓSe₁₋ₓ)₄ (abbreviated as CZTSSe) materials. Specifically, the paper explores methods to enhance the performance of solar cells by introducing band - gap grading (i.e., band - gap grading) in the CZTSSe layer. This method aims to overcome several major limiting factors currently existing in CZTSSe solar cells:

1. **Low open - circuit voltage (\(V_{oc}\))**: This is one of the key issues affecting the high efficiency of CZTSSe solar cells. The low open - circuit voltage is mainly due to:
- More bandtail states, which will cause the effective width of the band - gap to become narrower.
- The high electron - hole recombination rate within the CZTSSe layer because the lifetime of minority carriers (electrons) is short.
- The high electron - hole recombination rate at the CdS/CZTSSe interface because an ultrathin CdS layer is used as an n - type semiconductor.

2. **Low photoelectric conversion efficiency (\(\eta\))**: The current highest photoelectric conversion efficiency of CZTSSe solar cells is only 12.6%, far lower than the record efficiency of 22.6% of CIGS solar cells.

To address these problems, the paper proposes a coupled optoelectronic device model and combines the differential evolution algorithm (DEA) to evaluate the effects of different band - gap grading strategies. In the study, two band - gap distribution methods, linear grading and sinusoidal grading, are considered, and the influence of whether the back reflector is a flat or periodic groove structure on the efficiency is also explored.

Through these methods, the paper predicts that band - gap grading can significantly improve the efficiency of CZTSSe solar cells. For example, for an 870 - nanometer - thick CZTSSe layer, a sinusoidal - graded band - gap can achieve an efficiency of 21.74%, while a 2200 - nanometer - thick uniform CZTSSe layer can only achieve an efficiency of 12.6% in experiments. The high - efficiency improvement is mainly attributed to the high electron - hole pair generation rate in the narrow - band - gap region and the high open - circuit voltage brought by the wide - band - gaps near the front and back surfaces.