Abstract:As initiated Chemical Vapor Deposition (iCVD) finds increasing application in precision industries like electronics and optics, defect prevention will become critical. While studies of non-ideal morphology exist in the iCVD literature, no studies investigate the role of defects. To address this knowledge gap, we show that the buildup of short-chain polymers or oligomers during normal operation of an iCVD reactor can lead to defects that compromise film integrity. We used atomic force microscopy to show that oligomer aggregates selectively prevented film growth, causing these hole-like defects. X-ray diffraction and optical microscopy demonstrated the crystallinity of the aggregates, pointing to a flat-on lamellar or mono-lamellar structure. To understand the origin of the aggregates, spectroscopic ellipsometry showed that samples exposed to the reactor consistently accrued low-volatility contaminants. X-ray photoelectron spectroscopy revealed material derived from polymerization in the contamination, while scanning electron microscopy showed the presence of defect-causing aggregates. We directly linked oligomeric/polymeric contamination with defect formation by showing an increased defect rate when a contaminant polymer was heated alongside the sample. Most importantly, we showed that starting a deposition at a high sample temperature (e.g., 50 °C) before reducing it to the desired setpoint (e.g., 9 °C) unilaterally prevented defects, providing a simple method to prevent defects with minimal impact on operations.

Contamination Control in Semiconductor Manufacturing Processes

Research Status and Progress of Contamination Control in Immersion Liquid System of Immersion Lithography Machine

Corrosion of stainless steels and corrosion protection strategies in the semiconductor manufacturing industry: a review

Trace Metallic Contamination Analysis on Wafer Edge and Bevel by TXRF and VPD-TXRF

Optimization of approach for metal contamination reduction

Amorphous silicon coatings for control of corrosion and metal ion contamination

Optimization of Ion Implanter Hardware for Metal Contamination Reduction

Electrode contamination caused by metal vapour transport during tungsten inert gas welding

Failure Analysis of the Contamination on the Pins of the SOT Packages

Prevention and characterization of thin film defects induced by contaminant aggregates in initiated chemical vapor deposition

Investigation on surface contamination caused by human on phase shifter chip

Cover Image, Volume 140, Issue 21

Trace metal contamination analysis of wafer edge and bevel by automated VPD ICP-MS: CFM: Contamination free manufacturing

Filtering, Recirculating, Reuse, and Recycling of Chemicals

Contamination in wet-ball milling

In-situ Chamber Clean for Chromium Etch Application

Comprehensive review of surface contamination in nuclear waste waters: identification, quantification, and mitigation strategies

Research on metallic contamination control of PFA injection molded fittings

Influence of initial wafer cleanliness on metal removal efficiency in immersion SC-1 cleaning: limitation of immersion-type wet cleaning

Particles Detection and Analysis of Hard Disk Substrate after Cleaning of Post Chemical Mechanical Polishing

Particle contaminations in LPCVD polysilicon