Abstract:This study aimed to elucidate the physicochemical characteristics and occupational exposure of silica powder and airborne particles as byproducts generated from the first scrubbers of chemical vapor deposition and diffusion processes during maintenance in a semiconductor facility sub fab to reduce unknown risk factors. The chemical composition, size, morphology, and crystal structure of powder and airborne particles as byproducts were investigated using a scanning electron microscopy and transmission electron microscopy equipped with an energy dispersive X-ray spectroscopy, and an X-ray diffraction. The number and mass concentration measurements of airborne particles were performed by using an optical particle sizer of a direct-reading aerosol monitor. All powder and airborne particle samples were mainly composed of oxygen (O) and silicon (Si), which means silica. The byproduct particles were spherical and/or nearly spherical and the particle size ranged from 10 to 90 nm, based on primary particles. Most of the particles were usually agglomerated within a particle size range from approximately 100 nm to 35 µm. In addition, most of the powder samples exhibited diffraction patterns with a broad and relatively low intensity at 2θ degrees 21.6-26.7°, which is similar to that of pure amorphous silica. The above results show the byproduct particles are amorphous silica, which are considered a less toxic foam compared to crystalline silica. The number and mass concentrations of PM10 (particles less than 10 µm in diameter) ranged from 4.250-78.466 particles/cm3 and 0.939-735.531 µg/m3, respectively. In addition, 0.3-1.0 and 2.5-10 µm particles occupied the highest portion of the number and mass concentrations, respectively. Meanwhile, several peak exposure patterns were observed at a specific step, which is the process of removing powder particles on the inner chamber and cleaning the chamber by using a vacuum cleaner and a clean wiper, during the maintenance task.

Particle contaminations in LPCVD polysilicon

A Study on Formation and Elimination of Fogging in LPCVD Poly Si Films

Analysis of Fogging During Deposition of Polysilicon Thin Film in LPCVD System

Analysis of Large Particle Count in Fumed Silica Slurries and Its Correlation with Scratch Defects Generated by CMP

Silicide Formation with Tungsten Deposited from W-LPCVD; the Role of Back Surface Conditions

An overview of the deposition chemistry and the properties of in situ doped polysilicon prepared by low pressure chemical vapour deposition

Physicochemical Characteristics and Occupational Exposure of Silica Particles as Byproducts in a Semiconductor Sub Fab

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Structural Analysis of Polycrystalline Silicon Thin Films Produced by Two Different ICPCVD Approaches

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Lifting Polyether Suppression during Cu Electrodeposition

A Revisit from CVD Kinetics to CVD Reactor: Investigating Uniform Growth Mechanism of Polysilicon in a Reduction Furnace

Chemical Vapor Deposition of Silicon in a Lamp-Heated Reactor

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Local Heat and Mass Transfer Characteristics of Different Channel Configurations in Polysilicon Chemical Vapor Deposition Reactor

Laser Cleaning Techniques for Removing Surface Particulate Contaminants on Sol-Gel SiO 2 Films