Abstract:By performing standard PUND (positive-up-negative-down), hysteresis-loop and dielectric measurements on the ferroelectric lead zirconate titanate (PZT) thin-film capacitors subject to bipolar/unipolar electrical cycling, we show that unipolar fatigue is evident though still less severe than bipolar fatigue conducted at the same voltage. That has been attributed to polarization retention (backswitching) induced by the residual depolarization field between the monopolar pulses where the applied field is lower than the depolarization field, and explained using the LPD-SICI model (LPD-SICI stands for local phase decomposition caused by switching-induced charge injection). The conventional view that switching does not occur during unipolar electrical cycling may need to be corrected. PUND results recorded using the pulses of the same voltage as those for repetitive fatigue cycling are not reliable if the voltage is lower than 2Vc (Vc is the saturated coercive voltage). Dielectric measurements or hysteresis-loop measurements at higher voltages (e.g. 4Vc) are more reliable ways to evaluate the degree of fatigue and could provide more valuable information in such situations. Finally, dielectric results have been used to estimate the effective thickness di of the fatigue-induced degraded (pyrochlorelike) interfacial layer after bipolar/unipolar fatigue, which has not been done so far to our best knowledge. The fact that di is still much less than the film thickness even after the most severe bipolar fatigue strongly suggests that polarization fatigue in ferroelectrics is an interface effect, not a bulk one.

Investigation of interface and bulk fatigue scenarios in sol-gel derived Pb(Zr0.5Ti0.5)O3 films by asymmetric field driving

Identification of Interfacial and Bulk Effects in Modulating Fatigue Behaviors of Pb(Zr0.52Ti0.48)O3 Thin Films

Interfacial dielectric layer as an origin of polarization fatigue in ferroelectric capacitors

Polarization Fatigue and Photoinduced Current in ( Pb 0 . 72 La 0 . 28 ) Ti 0 . 93 O 3 Buffered Pb ( Zr 0 . 52 Ti 0 . 48 ) O 3 Films on Platinized Silicon

Mechanism of Polarization Fatigue in BiFeO3: the Role of Schottky Barrier

Imprint And Fatigue Properties Of Pt/Pb(Zr0.4ti0.6)O-3/Pt Capacitor

Charge Injection and Polarization Fatigue in Ferroelectric Thin Films

Preparation of PZT/LNO capacitor and investigation of its fatigue property

Asymmetry in fatigue and recovery in ferroelectric Pb(Zr,Ti)O3 thin-film capacitors

Unsaturated Charge Injection at High-Frequency Fatigue of Pt∕Pb(Zr,Ti)O3∕Pt Thin-Film Capacitors

Scanning force microscopy investigation of the Pb(Zr0.25Ti0.75)O3/Pt interface

Effects of Pb Excess and Temperature on Polarization Fatigue in Sol-Gel Derived Pb(Zr0.3ti0.7)O3 Thin Films

Bipolar and unipolar electrical fatigue in ferroelectric lead zirconate titanate thin films: an experimental comparison study

Polarization Fatigue Of Ferroelectric Pb(Zr0.1ti0.9)O-3 Thin Films: Temperature Dependence

Electrically induced strains and piezoelectric properties of thin layer ferroelectrics

Processing and Thickness Effects on the Microstructure and Electrical Properties of Sol–gel Deposited Pb(Zr, Ti)O3 Films

Enhancement of Energy-Storage Density in PZT/PZO-Based Multilayer Ferroelectric Thin Films

Effect of bottom electrodes on polarization switching and energy storage properties in Pb 0.97 La 0.02 (Zr 0.95 Ti 0.05 )O 3 antiferroelectric thin films

Use of Nanomechanical Fracture-Testing for Determining the Interfacial Adhesion of PZT Ferroelectric Thin Films

Role of interfacial defect on electro‐chemo‐mechanical failure of solid‐state electrolyte

Studies of a PT/PZT/PT Sandwich Structure for Feram Applications Using Sol-Gel Processing