Abstract:Direct reduction of metal oxides into a few transition metal dichalcogenide (TMDCs) monolayers has been recently explored as an alternative method for large area and uniform deposition. However, not many studies have addressed the characteristics and requirement of the metal oxides into TMDCs by the selenization/sulfurization processes, yielding a wide range of outstanding properties to poor electrical characteristics with nonuniform films. The large difference implies that the process is yet not fully understood. In particular, the selenization/sulfurization at low temperature leads to poor crystallinity films with poor electrical performance, hindering its practical development. A common approach to improve the quality of the selenized/sulfurized films is by further increasing the process temperature, thus requiring additional transfer in order to explore the electrical properties. Here, we show that by finely tuning the quality of the predeposited oxide the selenization/sulfurization temperature can be largely decreased, avoiding major substrate damage and allowing direct device fabrication. The direct relationship between the role of selecting different metal oxides prepared by e-beam evaporation and reactive sputtering and their oxygen deficiency/vacancy leading to quality influence of TMDCs was investigated in detail. Because of its outstanding physical properties, the formation of tungsten diselenide (WSe2) from the reduction of tungsten oxide (WO x) was chosen as a model for proof of concept. By optimizing the process parameters and the selection of metal oxides, layered WSe2 films with controlled atomic thickness can be demonstrated. Interestingly, the domain size and electrical properties of the layered WSe2 films are highly affected by the quality of the metal oxides, for which the layered WSe2 film with small domains exhibits a metallic behavior and the layered WSe2 films with larger domains provides clear semiconducting behavior. Finally, an 8'' wafer scale-layered WSe2 film was demonstrated, giving a step forward in the development of 2D TMDC electronics in the industry.

Low‐Damaged Layer‐by‐Layer Etching of Large‐Area Molybdenum Disulfide Films via Mild Plasma Treatment

Layer-controlled precise fabrication of ultrathin MoS2 films by atomic layer deposition

Selective surface modification and layer thinning of MoS2 via ultraviolet light irradiation in ionic solution

Selective Surface Modification and Layer Thinning of MoS 2 via Ultraviolet-Light Irradiation in an Ionic Solution: Implications for Multifunctional Nanoelectronic Devices

A Facile Space-Confined Solid-Phase Sulfurization Strategy for Growth of High-Quality Ultrathin Molybdenum Disulfide Single Crystals

Controllable preparation of monolayer MoO3/MoO by using plasma oxidation and atomic layer etching

Soft Sputtering of Large‐Area 2D MoS2 Layers Using Isolated Plasma Soft Deposition for Humidity Sensors

Optimization of growth parameters to obtain epitaxial large area growth of molybdenum disulfide using pulsed laser deposition

Optimization of Defects in Large-Area Synthetic MoS2 Thin Films by CS2 Treatment for Switching and Sensing Devices

Thickness Tunable Wedding-Cake-like MoS2 Flakes for High-Performance Optoelectronics

High-quality MoS2 monolayers with largely enhanced electrical properties by plasma-treated SiO2/Si substrates based chemical vapor deposition

Controlling Grain Size and Continuous Layer Growth in Two-Dimensional MoS2 Films for Nanoelectronic Device Application

Achieving Adsorbate-Free Monolayered MoS 2 Field Effect Transistors by Controlled Surface Gas Treatment

Facile Exfoliation for High-Quality Molybdenum Disulfide Nanoflakes and Relevant Field-Effect Transistors Developed With Thermal Treatment

Synthesis and Characterization of Large Area Few-layer MoS2 and WS2 Films

Wafer‐Scale Demonstration of Polycrystalline MoS2 Growth on 200 mm Glass and SiO2/Si Substrates by Plasma‐Enhanced Atomic Layer Deposition

Selection Role of Metal Oxides into Transition Metal Dichalcogenide Monolayers by a Direct Selenization Process

Synthesis of Ultrahigh‐Quality Monolayer Molybdenum Disulfide through In Situ Defect Healing with Thiol Molecules

Layer-by-Layer Thinning of MoS2 by Plasma

Controlled Growth of large area bilayer MoS$_2$ films on SiO$_2$ substrates by chemical vapour deposition technique

Precise Layer Control of MoTe2 by Ozone Treatment.