Synthesis of Ultrahigh‐Quality Monolayer Molybdenum Disulfide through In Situ Defect Healing with Thiol Molecules

Simin Feng,Junyang Tan,Shilong Zhao,Shuqing Zhang,Usman Khan,Lei Tang,Xiaolong Zou,Junhao Lin,Hui‐Ming Cheng,Bilu Liu
DOI: https://doi.org/10.1002/smll.202003357
IF: 13.3
2020-08-02
Small
Abstract:<p>Monolayer transition metal dichalcogenides are 2D materials with many potential applications. Chemical vapor deposition (CVD) is a promising method to synthesize these materials. However, CVD‐grown materials generally have poorer quality than mechanically exfoliated ones and contain more defects due to the difficulties in controlling precursors' distribution and concentration during growth where solid precursors are used. Here, thiol is proposed to be used as a liquid precursor for CVD growth of high quality and uniform 2D MoS<sub>2</sub>. Atomic‐resolved structure characterizations indicate that the concentration of sulfur vacancies in the MoS<sub>2</sub> grown from thiol is the lowest among all reported CVD samples. Low temperature spectroscopic characterization further reveals the ultrahigh optical quality of the grown MoS<sub>2</sub>. Density functional theory simulations indicate that thiol molecules could interact with sulfur vacancies in MoS<sub>2</sub> and repair these defects during the growth of MoS<sub>2</sub>, resulting in high‐quality MoS<sub>2</sub>. This work provides a facile and controllable method for the growth of high‐quality 2D materials with ultralow sulfur vacancies and high optical quality, which will benefit their optoelectronic applications.</p>
materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
What problem does this paper attempt to address?
The main objective of this paper is to address the issue of defects, particularly sulfur vacancies, in monolayer molybdenum disulfide (MoS₂) synthesized via chemical vapor deposition (CVD). Traditional CVD methods use solid precursors such as molybdenum oxides and sulfur powder. However, these precursors are highly sensitive to temperature and pressure during volatilization, resulting in synthesized materials with uneven quality and numerous defects. To solve this problem, researchers have developed a new liquid precursor chemical vapor deposition (LCVD) method, using sulfur-containing thiol molecules as precursors. This method allows for precise control of precursor concentration and uniform distribution on the substrate, thereby growing high-quality, low-defect-density MoS₂ monolayer materials. Atomic-level structural characterization revealed that the concentration of sulfur vacancies in MoS₂ grown using thiol molecules is the lowest among all reported CVD samples, and its optical quality is also very high. Theoretical simulations indicate that thiol molecules can interact with sulfur vacancies in MoS₂ during the growth process and repair these defects, resulting in high-quality MoS₂ monolayer materials. Therefore, this study provides a simple and controllable method to grow 2D materials with ultra-low sulfur vacancies and high optical quality, which is significant for the preparation of MoS₂ and its optoelectronic applications.