Abstract:Molybdenum disulfide (MoS2) is a semiconducting transition metal dichalcogenide material. This two-dimensional (2D) layered material has a band gap ranging from 1.3 eV in bulk form (indirect) to 1.88 eV as a monolayer (direct). The material has been suggested as a potential candidate for applications in nanoelectronics, optoelectronics and neuromorphic computing [1]–[4]. In this talk, the principles of scalable growth through thermal conversion of metals and metal-organic vapor phase growth will be discussed [5], [6]. These materials are then integrated into the silicon technology platform to demonstrate device applications. Conventional field effect transistors with MoS2 channels show promising characteristics. In addition, ion-based plasticity promises to enable memristive functionality on MoS2 devices. In particular, vertically aligned MoS2 layers allow the tuning of energy barriers at MoS2/semiconductor Schottky junctions through mobile ions [7], [8]. These ions (OH-) likely originate from catalytic splitting of water molecules. Spectral response measurements of MoS2 based devices provide insight into the band structure and beyond, as photodetectors based on MoS2/silicon/graphene and MoS2/amorphous silicon heterostructures show peculiar responsivity in the infrared regime [9]–[11]. Acknowledgements The authors acknowledge funding through the European Union’s Horizon 2020 research and innovation programme under grant agreements 785219 (Graphene Flagship) and 829035 (QUEFORMAL), the German BMBF grant NEUROTEC (16ES1134) and the DFG projects MOSTFLEX (407080863) and ULTIMOS2 (412113712). References [1] K. F. Mak, C. Lee, J. Hone, J. Shan, and T. F. Heinz, “Atomically Thin MoS2: A New Direct-Gap Semiconductor,” Phys. Rev. Lett., vol. 105, no. 13, p. 136805, Sep. 2010. [2] B. Radisavljevic and A. Kis, “Mobility engineering and a metal–insulator transition in monolayer MoS2,” Nat. Mater., vol. 12, no. 9, pp. 815–820, Sep. 2013. [3] A. Bablich, S. Kataria, and M. C. Lemme, “Graphene and Two-Dimensional Materials for Optoelectronic Applications,” Electronics, vol. 5, no. 1, p. 13, Mar. 2016. [4] V. K. Sangwan et al., “Multi-terminal memtransistors from polycrystalline monolayer molybdenum disulfide,” Nature, vol. 554, no. 7693, pp. 500–504, Feb. 2018. [5] S. Kataria et al., “Growth-Induced Strain in Chemical Vapor Deposited Monolayer MoS2: Experimental and Theoretical Investigation,” Adv. Mater. Interfaces, vol. 4, no. 17, p. 1700031, Sep. 2017. [6] M. Marx et al., “Large-area MoS2 deposition via MOVPE,” J. Cryst. Growth, vol. 464, pp. 100–104, Apr. 2017. [7] M. Belete et al., “Dielectric Properties and Ion Transport in Layered MoS2 Grown by Vapor-Phase Sulfurization for Potential Applications in Nanoelectronics,” ACS Appl. Nano Mater., vol. 1, no. 11, pp. 6197–6204, Nov. 2018. [8] M. Belete et al., “Nonvolatile Resistive Switching in Nanocrystalline Molybdenum Disulfide with Ion-Based Plasticity,” arXiv:1911.06032, 2019. [9] C. Yim et al., “Heterojunction Hybrid Devices from Vapor Phase Grown MoS2,” Sci. Rep., vol. 4, Jun. 2014. [10] M. Belete et al., “Large Scale MoS2/Si Photodiodes with Graphene Transparent Electrodes,” presented at the European Solid-State Device Research Conference (ESSDERC), Krakow, Poland, 2019. [11] A. Bablich et al., “Few-Layer MoS2/a-Si:H Heterojunction Pin-Photodiodes for Extended Infrared Detection,” ACS Photonics, vol. 6, no. 6, pp. 1372–1378, Jun. 2019.

Soft Sputtering of Large‐Area 2D MoS2 Layers Using Isolated Plasma Soft Deposition for Humidity Sensors

Low-Temperature Synthesis of Large-Scale Molybdenum Disulfide Thin Films Directly on a Plastic Substrate Using Plasma-Enhanced Chemical Vapor Deposition

Space-confined CVD growth of 2D-MoS<sub>2</sub> crystals with tunable dimensionality <i>via</i> adjusting growth conditions

Wafer-scale MOCVD growth of monolayer MoS2 on sapphire and SiO2

Wafer-Scale Two-Dimensional MoS2 Layers Integrated on Cellulose Substrates Toward Environmentally Friendly Transient Electronic Devices

Towards Low-Temperature CVD Synthesis and Characterization of Mono- or Few-Layer Molybdenum Disulfide

Chemical Vapor Deposition Synthesized Atomically Thin Molybdenum Disulfide with Optoelectronic-Grade Crystalline Quality

Large Area Vapor Phase Growth and Characterization of MoS2 Atomic Layers on SiO2 Substrate

Wafer‐Scale Demonstration of Polycrystalline MoS2 Growth on 200 mm Glass and SiO2/Si Substrates by Plasma‐Enhanced Atomic Layer Deposition

Cotrollable growth of monolayer MoS2 films and the application in devices

(Invited) Transistors, Memristors and Optoelectronics Based on Two-Dimensional Molybdenum Disulfide

Wafer-Scale Highly Oriented Monolayer MoS 2 with Large Domain Sizes

Growth of wafer-scale MoS2 monolayer by magnetron sputtering.

Layer-controlled precise fabrication of ultrathin MoS2 films by atomic layer deposition

Epitaxy of Wafer-Scale Single-Crystal MoS2 Monolayer Via Buffer Layer Control

2D-MoS2 goes 3D: transferring optoelectronic properties of 2D MoS2 to a large-area thin film

Top-Down Integration of Molybdenum Disulfide Transistors with Wafer-Scale Uniformity and Layer Controllability.

Assessment of wafer scale MoS2 atomic layers grown by metal-organic chemical vapor deposition using organo-metal, organo-sulfide, and H2S precursors

Rapid and Large-Scale Quality Assessment of Two-Dimensional MoS 2 Using Sulfur Particles with Optical Visualization

Controllable Growth of Monolayer MoS2by Chemical Vapor Deposition Via Close MoO2precursor for Electrical and Optical Applications

Smart sensing of the multifunctional properties of magnetron sputtered $MoS_2$ across the amorphous-crystalline transition