Abstract:Single-crystal transition metal dichalcogenides (TMDs) and TMD-based heterojunctions have recently attracted significant research and industrial interest owing to their intriguing optical and electrical properties. However, the lack of a simple, low-cost, environmentally friendly, synthetic method and a poor understanding of the growth mechanism post a huge challenge to implementing TMDs in practical applications. In this work, we developed a novel approach for direct formation of high-quality, monolayer and few-layer MoS2 single crystal domains via a single-step rapid thermal processing of a sandwiched reactor with sulfur and molybdenum (Mo) film in a confined reaction space. An all-solid-phase growth mechanism was proposed and experimentally/theoretically evidenced by analyzing the surface potential and morphology mapping. Compared with the conventional chemical vapor deposition approaches, our method involves no complicated gas-phase reactant transfer or reactions and requires very small amount of solid precursors [e.g., Mo (∼3 μg)], no carrier gas, no pretreatment of the precursor, no complex equipment design, thereby facilitating a simple, low-cost, and environmentally friendly growth. Moreover, we examined the symmetry, defects, and stacking phase in as-grown MoS2 samples using simultaneous second-harmonic-/sum-frequency-generation (SHG/SFG) imaging. For the first time, we observed that the SFG (peak intensity/position) polarization can be used as a sensitive probe to identify the orientation of TMDs' crystallographic axes. Furthermore, we fabricated ferroelectric programmable Schottky junction devices via local domain patterning using the as-grown, single-crystal monolayer MoS2, revealing their great potential in logic and optoelectronic applications. Our strategy thus provides a simple, low-cost, and scalable path toward a wide variety of TMD single crystal growth and novel functional device design.

Low-Temperature Synthesis of Large-Scale Molybdenum Disulfide Thin Films Directly on a Plastic Substrate Using Plasma-Enhanced Chemical Vapor Deposition

Soft Sputtering of Large‐Area 2D MoS2 Layers Using Isolated Plasma Soft Deposition for Humidity Sensors

Synthesis of High-Performance Monolayer Molybdenum Disulfide at Low Temperature.

Low-temperature synthesis of uniform monolayer molybdenum disulfide films

Towards Low-Temperature CVD Synthesis and Characterization of Mono- or Few-Layer Molybdenum Disulfide

Chemical Vapor Deposition Synthesized Atomically Thin Molybdenum Disulfide with Optoelectronic-Grade Crystalline Quality

Substrate-induced strain in molybdenum disulfide grown by aerosol-assisted chemical vapor deposition

Wafer-scale MOCVD growth of monolayer MoS2 on sapphire and SiO2

Metal-agglomeration-suppressed growth of MoS2 and MoSe2 films with small sulfur and selenium molecules for high mobility field effect transistor applications

Synthesis of Large-Area Single- to Few-Layered MoS2 on an Ionic Liquid Surface

Synthesis of Uniform Two-Dimensional MoS 2 Films Via Thermal Evaporation

Liquid-Metal-Assisted Deposition and Patterning of Molybdenum Dioxide at Low Temperature

Two-dimensional materials cool down

Low-Temperature and Large-Scale Production of a Transition Metal Sulfide Vertical Heterostructure and Its Application for Photodetectors

A Facile Space-Confined Solid-Phase Sulfurization Strategy for Growth of High-Quality Ultrathin Molybdenum Disulfide Single Crystals

Large‐Scale Ultra‐Robust MoS2 Patterns Directly Synthesized on Polymer Substrate for Flexible Sensing Electronics (Adv. Mater. 8/2023)

Synthesis of uniform two-dimensional MoS2 films via thermal evaporation

Low-thermal-budget synthesis of monolayer MoS2

Growth of Wide-Bandgap Monolayer Molybdenum Disulfide for a Highly Sensitive Micro-Displacement Sensor

Insulator Material Deposited with Molybdenum Disulphide Prospective for Sensing Application

Wafer-scale MoS2 with water-vapor assisted showerhead MOCVD