Abstract:The monolithic photolithograph integration of sub‐5 μm perovskite quantum‐dot (PeQD) pixels is achieved on 0.39‐inch blue‐backlight micro‐LED screens. This integration demonstrates full‐color image and video display capabilities, with remarkable features including brightness exceeding 400 000 nits, an ultra‐high resolution of 3300 PPI, and a wide color gamut of 130.4% NTSC. Monolithic integration of color‐conversion materials onto blue‐backlight micro‐light‐emitting‐diodes (micro‐LEDs) has emerged as a promising strategy for achieving full‐color microdisplay devices. However, this approach still encounters challenges such as the blue‐backlight leakage and the poor fabrication yield rate due to unsatisfied quantum dot (QD) material and fabrication process. Here, the monolithic integration of 0.39‐inch micro‐display screens displaying colorful pictures and videos are demonstrated, which are enabled by creating interfacial chemical bonds for wafer‐scale adhesion of sub‐5 μm QD‐pixels on blue‐backlight micro‐LED wafer. The ligand molecule with chlorosulfonyl and silane groups is selected as the synthesis ligand and surface treatment material, facilitating the preparation of high‐efficiency QD photoresist and the formation of robust chemical bonds for pixel integration. This is a leading record in micro‐display devices achieving the highest brightness larger than 400 thousand nits, the ultrahigh resolution of 3300 PPI, the wide color gamut of 130.4% NTSC, and the ultimate performance of service life exceeding 1000 h. These results extend the mature integrated circuit technique into the manufacture of micro‐display device, which also lead the road of industrialization process of full‐color micro‐LEDs.

All Silicon Microdisplay Fabricated Utilizing 0.18 μm CMOS-IC With Monolithic Integration

Efficient Mini/Micro-Perovskite Light-Emitting Diodes

A Fully-Integrated Micro-Display System With Hybrid Voltage Regulator

Three-dimensional monolithic micro-LED display driven by atomically thin transistor matrix

OLED Microdisplay With Monolithically Integrated CAAC-OS FET and Si CMOS Achieved by Two-Dimensionally Arranged Silicon Display Drivers

Active matrix monolithic micro‐LED full‐color micro‐display

Monolithic High-Performance Micro-Leds Using Planar-Geometry Pixelation Process for High-Resolution Micro-Display Applications

51‐4: QLED‐on‐Silicon Microdisplays

Circuit Design of Single Panel Color LCOS Microdisplay Chip

Integrated 2T1C pixel circuit with a-Si TFT and NMOS for active matrix mini-LED displays

Monolithic Integration of Full‐Color Microdisplay Screen with Sub‐5 μm Quantum‐Dot Pixels

High-Density Integration of Ultrabright OLEDs on a Miniaturized Needle-Shaped CMOS Backplane

Monolithically Integrated μ LEDs/HEMTs Microdisplay on a Single Chip by a Direct Epitaxial Approach

Monolithic 3D sequential integration realizing 1600-PPI red micro-LED display on Si CMOS driver IC

Wafer-Level Monolithic Integration of Vertical Micro-LEDs on Glass

Monolithic full-color active-matrix micro-LED micro-display using InGaN/AlGaInP heterogeneous integration

48 × 48 Pixelated Addressable Full-Color Micro Display Based on Flip-Chip Micro LEDs.

59‐3: Distinguished Paper: Wafer Scale Hybrid Monolithic Integration of Si‐based IC and III‐V Epilayers ‐ a Mass Manufacturable Approach for Active Matrix micro‐LED Displays

3400 PPI Active-Matrix Monolithic Blue and Green Micro-LED Display

35.4: A 2.1‐inch AMOLED Display Based on Metal‐Induced Laterally Crystallized Polycrystalline Silicon Technology

Silicon MOS Optoelectronic Micro‐Nano Structure Based on Reverse‐Biased PN Junction