Abstract:Group III–V semiconductor‐based microscale light‐emitting diode (micro‐LED) displays are recognized as one of the most promising display technologies with superhigh brightness and resolution, strong contrast, and superlarge color gamut but currently suffer from low efficiency, low production yield, and high cost. Here, it is proposed to realize cost‐effective and full‐color micro‐LED displays by using microscale perovskite quantum dot LEDs (micro‐PeLEDs) as emitters. Bright and uniform red‐, green‐, and blue‐emitting (RGB) micro‐PeLED arrays with each pixel size as small as 45 µm are fabricated by in situ inkjet printing a perovskite quantum dot (PeQD) emissive layer in the structure of indium tin oxide/poly(3,4‐ethylenedioxythiophene)‐poly(styrenesulfonate) (PEDOT:PSS)/poly(9‐vinylcarbazole) (PVK)/sodium dodecyl sulfate (SDS)/PeQD/1,3,5‐tris(1‐phenyl‐1H‐benzimidazol‐2‐yl)benzene (TPBi)/LiF/Al. These RGB micro‐PeLED arrays display an external quantum efficiency of 0.832%, 0.419%, and 0.052% for red, green, and blue colors, a resolution of 210 PPI, and a wide color gamut (135% of the National Television Standards Committee standard). The authors further demonstrate flexible and full‐color active‐matrix micro‐PeLED displays, which have potential applications in future ultrahigh‐definition displays, light communication, and artificial intelligence. Microscale perovskite quantum dot light‐emitting diodes (micro‐PeLEDs) are fabricated through an “interface engineering‐inkjet printing‐plasma etching” strategy using perovskite quantum dot arrays as the emissive layer for full‐color displays with the advantages of low cost, free massive transfer, high resolution, and suitability for large‐area or flexible displays. This provides a new approach for the development of micro‐LEDs.

51‐4: QLED‐on‐Silicon Microdisplays

A full high‐definition quantum dot light‐emitting diode‐on‐silicon microdisplay

Monolithic Integration of Full‐Color Microdisplay Screen with Sub‐5 μm Quantum‐Dot Pixels

P‐12.1: Inkjet Printed Quantum Dots for Full Color Active Matrix Micro‐LED Display

A 4.7‐inch 650 PPI AMQLED display prepared by direct photolithography

Full-color micro-LED displays with cadmium-free quantum dots patterned by photolithography technology

Top-Emitting Active-Matrix Quantum Dot Light-Emitting Diode Array with Optical Microcavity for Micro QLED Display

92‐1: Invited Paper: Wide‐Color‐Gamut and Stable MicroLED Displays Using UV‐Pumped Cd‐Free Quantum Dots

Monolithic full‐color microdisplay using patterned quantum dot photoresist on dual‐wavelength LED epilayers

Active matrix monolithic micro‐LED full‐color micro‐display

Device Physics and Device Chemistry of Quantum-Dot Light-Emitting Diodes

Monolithic Full-Color Micro-LED Displays Featuring Three-Dimensional Chip Bonding and Quantum Dot-Based Color Conversion Layer

Full-Colour Quantum Dot Displays Fabricated by Transfer Printing

Microscale Perovskite Quantum Dot Light‐Emitting Diodes (Micro‐PeLEDs) for Full‐Color Displays

Synthesis of SiO2-coated CdSe/ZnS quantum dots using various dispersants in the photoresist for color-conversion micro-LED displays

P‐107: Inkjet Printed Uniform Quantum Dots As Color Conversion for Active Matrix Micro‐LED Display

Full-Color Quantum Dot Light-Emitting Diodes Based on Microcavities

All Silicon Microdisplay Fabricated Utilizing 0.18 μm CMOS-IC With Monolithic Integration

Monolithic full-color active-matrix micro-LED micro-display using InGaN/AlGaInP heterogeneous integration

35.4: A 2.1‐inch AMOLED Display Based on Metal‐Induced Laterally Crystallized Polycrystalline Silicon Technology

21‐2: The full‐color Micro‐LEDs display based on quantum dots