The temperature dependent negative dielectric constant phenomena of Au/n–GaAs structure with CZO interfacial layer

Barış Kınacı

DOI: https://doi.org/10.1007/s10854-021-05313-x

2021-02-06

Abstract:In this study, the copper-doped (wt 3%) ZnO (CZO) thin film was deposited on n–type (100)–oriented GaAs substrate with the RF sputtering system and this film was annealed at 600 °C. The dielectric parameters such as dielectric constant (<span class="mathjax-tex">\({\varepsilon }^{{\prime}}\)</span>), dielectric loss (<span class="mathjax-tex">\(\varepsilon^{ \prime \prime}\)</span>), dielectric loss tangent (<span class="mathjax-tex">\(\mathrm{tan}\delta \)</span>), real (<span class="mathjax-tex">\({M}^{{\prime}}\)</span>) and the imaginary (<span class="mathjax-tex">\(M^{\prime \prime}\)</span>) part of the electric modulus, and ac conductivity (<span class="mathjax-tex">\({\sigma }_{ac}\)</span>) of Au/n–GaAs MOS structure with CZO thin film were examined in the temperature range of 200–380 K by 30 K steps. The variations of these parameters depending on the voltage were also discussed in the range of 1.5 V to 3.0 V by step 0.5 V. Dielectric constant has been studied in detail in three different temperature ranges as low (200 – 260 K), medium (290 K), and high (300 – 380 K). While the dielectric constant takes positive values for the low and medium temperature range in the forward bias voltage region, it takes negative values for the high temperature region. As a result of this study, negative dielectric constant behavior was observed for high temperature values.

engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter, applied