Abstract:A plasmonic and passivation strategy is developed for an ultrathin device to shorten thin/ultrathin solar cell efficiency gap. The architecture is obtained by combining a microfluidic procedure to deposit nanoparticles with a nanoimprint lithography process to encapsulate these with a dielectric scheme. The integration within an ultrathin (Ag,Cu)(In,Ga)Se2 cell enables a 2% efficiency enhancement compared with a reference device. In response to climate and resource challenges, the transition to a renewable and decentralized energy system is imperative. Ultrathin Cu(In,Ga)Se2 (CIGS)‐based solar cells are compatible with such transition due to their low material usage and improved production throughput. Despite the benchmark efficiency of CIGS technology, ultrathin configurations face efficiency drops arising from increased rear interface recombination and incomplete light absorption. Dielectric passivation schemes address rear interface recombination, but achieving simultaneous electrical and optical gains is crucial for thinning down the absorber. Plasmonic nanoparticles emerge as a solution, enhancing light interaction through resonant scattering. In the proposed architecture, the nanoparticles are encapsulated within a dielectric rear passivation layer, combining effective passivation and light trapping. A controlled deposition and encapsulation of individualized nanoparticles is achieved by an optimized process flow using microfluidic devices and nanoimprint lithography. With the developed plasmonic and passivated architecture, a 3.7 mA cm−2 short‐circuit current density and a 23 mV open‐circuit voltage improvements are obtained, leading to an almost 2% increase in light‐to‐power conversion efficiency compared to a reference device. This work showcases the developed architecture potential to tackle the electrical and optical downfalls arising from the absorber thickness reduction, contributing to the dissemination of ultrathin technology.

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